Advanced High Operating Temperature Mid-Wave Infrared Sensors

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$729,993.00
Award Year:
2008
Program:
SBIR
Phase:
Phase II
Contract:
W911QX-08-C-0106
Agency Tracking Number:
A052-052-0738
Solicitation Year:
2005
Solicitation Topic Code:
A05-052
Solicitation Number:
2005.2
Small Business Information
EPIR TECHNOLOGIES, INC.
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
068568588
Principal Investigator:
Silviu Velicu
Senior Scientist/Director
(630) 771-0203
svelicu@epir.com
Business Contact:
Sivalingam Sivananthan
President
(630) 771-0201
ssivananthan@epir.com
Research Institution:
n/a
Abstract
The goal of this project is to reduce the cooling requirements of MWIR HgCdTe infrared photon detectors and improve detector performance at present-day cryogenic operating temperatures. During Phase I, we designed innovative Pn-N detectors and established the feasibility of growing the required HgCdTe-based structures by molecular beam epitaxy. Using this approach in a collaborative effort with the Army Research Laboratory and DRS Technologies, we demonstrated Auger suppression and high operating temperature devices based on LWIR MBE-grown HgCdTe. By employing a model similar to that previously developed, we propose to analyze two new approaches in Phase II to further reduce the dark currents: the implementation of novel PP+n-N+N and PP+p-N+N structures, and using p-type layers as absorbers. PP+n-N+N and PP+p-N+N structures benefit from reduced carrier injection into the absorber layers due to higher bandgap and higher doped barrier layers. Pp-N devices benefit from the slower Auger recombination in the absorber layers. The relative benefits and challenges of the four device architectures (Pn-N, Pp-N, PP+n-N+N and PP+p-N+N) will be evaluated. That architecture deemed to be most likely to be successful will be grown by MBE on large area silicon substrates. Non-equilibrium devices will be fabricated based on that architecture and fully characterized.

* information listed above is at the time of submission.

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