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Advanced High Operating Temperature Mid-Wave Infrared Sensors

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911QX-08-C-0106
Agency Tracking Number: A052-052-0738
Amount: $729,993.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: A05-052
Solicitation Number: 2005.2
Timeline
Solicitation Year: 2005
Award Year: 2008
Award Start Date (Proposal Award Date): 2008-10-01
Award End Date (Contract End Date): 2010-09-30
Small Business Information
590 Territorial Drive, Suite B
Bolingbrook, IL 60440
United States
DUNS: 068568588
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Silviu Velicu
 Senior Scientist/Director
 (630) 771-0203
 svelicu@epir.com
Business Contact
 Sivalingam Sivananthan
Title: President
Phone: (630) 771-0201
Email: ssivananthan@epir.com
Research Institution
N/A
Abstract

The goal of this project is to reduce the cooling requirements of MWIR HgCdTe infrared photon detectors and improve detector performance at present-day cryogenic operating temperatures. During Phase I, we designed innovative Pn-N detectors and established the feasibility of growing the required HgCdTe-based structures by molecular beam epitaxy. Using this approach in a collaborative effort with the Army Research Laboratory and DRS Technologies, we demonstrated Auger suppression and high operating temperature devices based on LWIR MBE-grown HgCdTe. By employing a model similar to that previously developed, we propose to analyze two new approaches in Phase II to further reduce the dark currents: the implementation of novel PP+n-N+N and PP+p-N+N structures, and using p-type layers as absorbers. PP+n-N+N and PP+p-N+N structures benefit from reduced carrier injection into the absorber layers due to higher bandgap and higher doped barrier layers. Pp-N devices benefit from the slower Auger recombination in the absorber layers. The relative benefits and challenges of the four device architectures (Pn-N, Pp-N, PP+n-N+N and PP+p-N+N) will be evaluated. That architecture deemed to be most likely to be successful will be grown by MBE on large area silicon substrates. Non-equilibrium devices will be fabricated based on that architecture and fully characterized.

* Information listed above is at the time of submission. *

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