Advanced High Operating Temperature Mid-Wave Infrared Sensors
Small Business Information
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
AbstractThe goal of this project is to reduce the cooling requirements of MWIR HgCdTe infrared photon detectors and improve detector performance at present-day cryogenic operating temperatures. During Phase I, we designed innovative Pn-N detectors and established the feasibility of growing the required HgCdTe-based structures by molecular beam epitaxy. Using this approach in a collaborative effort with the Army Research Laboratory and DRS Technologies, we demonstrated Auger suppression and high operating temperature devices based on LWIR MBE-grown HgCdTe. By employing a model similar to that previously developed, we propose to analyze two new approaches in Phase II to further reduce the dark currents: the implementation of novel PP+n-N+N and PP+p-N+N structures, and using p-type layers as absorbers. PP+n-N+N and PP+p-N+N structures benefit from reduced carrier injection into the absorber layers due to higher bandgap and higher doped barrier layers. Pp-N devices benefit from the slower Auger recombination in the absorber layers. The relative benefits and challenges of the four device architectures (Pn-N, Pp-N, PP+n-N+N and PP+p-N+N) will be evaluated. That architecture deemed to be most likely to be successful will be grown by MBE on large area silicon substrates. Non-equilibrium devices will be fabricated based on that architecture and fully characterized.
* information listed above is at the time of submission.