EPITAXIAL LABORATORY, INC.

Company Information
Address 25 Tiana Place
Dix Hills, NY, 11746-5215


Information

DUNS: 877211664

# of Employees: 6


Ownership Information

Hubzone Owned: N

Socially and Economically Disadvantaged: Y

Woman Owned: N



Award Charts




Award Listing

  1. Green Diode Lasers (480-550 nm Spectral Regime)

    Amount: $150,000.00

    Despite their broad applications, up to date, diode pumped solid state green lasers are almost exclusively dominate the market due to the lack of low defect or defect-free semiconductor materials with ...

    STTRPhase I2016Department of Defense Army
  2. High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range

    Amount: $149,950.00

    This STTR phase I project aims to develop a novel material system for muti-Watt level, Room Temperature 3.0 to 3.5 micron Quantum Cascade Lasers (QCLs) utilizing our state-of-art in house Mod Gen II m ...

    STTRPhase I2012Navy Department of Defense
  3. Ultra High Efficiency Multi Junction Solar Cells for Space Applications

    Amount: $100,000.00

    Anticipated future space-based mission capabilities will include high-powered platforms supporting high-bandwidth communication. To supply power to these missions higher efficiency solar cells can red ...

    SBIRPhase I2010Air Force Department of Defense
  4. High Efficiency Flexible Thin Multi-Junction Solar Cells

    Amount: $742,329.00

    ELI has recently produced ~16% AM0 efficiency flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficiency, improve ...

    SBIRPhase II2010Air Force Department of Defense
  5. High Efficiency Flexible Thin Multi-Junction Solar Cells

    Amount: $100,000.00

    ELI has recently produced ~16% AM0 efficiency crack-free flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficien ...

    SBIRPhase I2009Air Force Department of Defense
  6. Thin Multijunction Solar Cells

    Amount: $100,000.00

    As future demands are made for higher efficiency (30+ %), improved Watt/weight (1000 W/kg), it is clear that new approach that combine best attribute of crystalline and thin film solar cells to achiev ...

    SBIRPhase I2008Air Force Department of Defense
  7. Development of TlGaAs/GaAs materials for High Speed Electronic Devices

    Amount: $69,995.00

    High-performance, low cost monolithic radio-frequency integrated circuits (RFIC) have many applications for ARMY, other DOD components, and commercial site. The need for RFIC operating in the high mm- ...

    SBIRPhase I2001Army Department of Defense
  8. Novel TlGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor

    Amount: $69,420.00

    N/A

    SBIRPhase I1999Missile Defense Agency Department of Defense
  9. A Novel Buffer Layer Approach to Epitaxy of InSb on Si for HgCdTe Focal Plane Array Application

    Amount: $65,000.00

    N/A

    SBIRPhase I1999Missile Defense Agency Department of Defense
  10. High Performance 2.5 Micron InGaAs/InP TPV Cells Based on Novel Buffer Technology

    Amount: $65,000.00

    Due to a mature material growth and processing technology of InP and InGaAs, lattice-mismatched 2.5 um(0.55 ev )InGaAs/InP is identified as the most promising Thermophotovoltaic(TPV) material system f ...

    SBIRPhase I1998Missile Defense Agency Department of Defense

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