EPITAXIAL LABORATORY, INC.

Basic Information

25 Tiana Place
Dix Hills, NY, 11746-5215

Company Profile

n/a

Additional Details

Field Value
DUNS: 877211664
Hubzone Owned: N
Socially and Economically Disadvantaged: Y
Woman Owned: N
Number of Employees: 6


  1. High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range

    Amount: $149,950.00

    This STTR phase I project aims to develop a novel material system for muti-Watt level, Room Temperature 3.0 to 3.5 micron Quantum Cascade Lasers (QCLs) utilizing our state-of-art in house Mod Gen II m ...

    STTR Phase I 2012 Navy Department of Defense
  2. Ultra High Efficiency Multi Junction Solar Cells for Space Applications

    Amount: $100,000.00

    Anticipated future space-based mission capabilities will include high-powered platforms supporting high-bandwidth communication. To supply power to these missions higher efficiency solar cells can red ...

    SBIR Phase I 2010 Air Force Department of Defense
  3. High Efficiency Flexible Thin Multi-Junction Solar Cells

    Amount: $742,329.00

    ELI has recently produced ~16% AM0 efficiency flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficiency, improve ...

    SBIR Phase II 2010 Air Force Department of Defense
  4. High Efficiency Flexible Thin Multi-Junction Solar Cells

    Amount: $100,000.00

    ELI has recently produced ~16% AM0 efficiency crack-free flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficien ...

    SBIR Phase I 2009 Air Force Department of Defense
  5. Thin Multijunction Solar Cells

    Amount: $100,000.00

    As future demands are made for higher efficiency (30+ %), improved Watt/weight (1000 W/kg), it is clear that new approach that combine best attribute of crystalline and thin film solar cells to achiev ...

    SBIR Phase I 2008 Air Force Department of Defense
  6. Development of TlGaAs/GaAs materials for High Speed Electronic Devices

    Amount: $69,995.00

    High-performance, low cost monolithic radio-frequency integrated circuits (RFIC) have many applications for ARMY, other DOD components, and commercial site. The need for RFIC operating in the high mm- ...

    SBIR Phase I 2001 Army Department of Defense
  7. Novel TlGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor

    Amount: $69,420.00

    N/A

    SBIR Phase I 1999 Missile Defense Agency Department of Defense
  8. A Novel Buffer Layer Approach to Epitaxy of InSb on Si for HgCdTe Focal Plane Array Application

    Amount: $65,000.00

    N/A

    SBIR Phase I 1999 Missile Defense Agency Department of Defense
  9. High Performance 2.5 Micron InGaAs/InP TPV Cells Based on Novel Buffer Technology

    Amount: $65,000.00

    Due to a mature material growth and processing technology of InP and InGaAs, lattice-mismatched 2.5 um(0.55 ev )InGaAs/InP is identified as the most promising Thermophotovoltaic(TPV) material system f ...

    SBIR Phase I 1998 Missile Defense Agency Department of Defense
  10. New Materials For High Performance Sensors Operating Entire Ir Spectrum

    Amount: $599,961.00

    N/A

    SBIR Phase II 1998 National Aeronautics and Space Administration

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