EPITAXIAL LABORATORY, INC.

Company Information

Company Name
EPITAXIAL LABORATORY, INC.
Address
25 Tiana Place
Dix Hills, NY, 11746-5215
Phone
1 516-508-0060
URL
n/a
DUNS
877211664
Number of Employees
6
Hubzone Owned:
N
Minority Owned:
Y
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$769,415.00
10
SBIR Phase II
$1,342,290.00
2
STTR Phase I
$149,950.00
1

Award List

  1. Ultra High Efficiency Multi Junction Solar Cells for Space Applications

    Amount: $100,000.00

    Anticipated future space-based mission capabilities will include high-powered platforms supporting high-bandwidth communication. To supply power to these missions higher efficiency solar cells can red ...

    SBIR Phase I 2010 Air ForceDepartment of Defense
  2. High Efficiency Flexible Thin Multi-Junction Solar Cells

    Amount: $742,329.00

    ELI has recently produced ~16% AM0 efficiency flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficiency, improve ...

    SBIR Phase II 2010 Air ForceDepartment of Defense
  3. Molecular Beam Epitaxial Growth and Characterization of Novel VCSELs at 1.55 micron

    Amount: $60,000.00

    The vertical-cavity-surface-emitting laser(VCSEL) which operate at 1.55 or 1.3 um has been recognized as a key device in optical interconnection systems and parallel optical processing. However, the r ...

    SBIR Phase I 1997 Missile Defense AgencyDepartment of Defense
  4. Novel TlGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor

    Amount: $69,420.00

    N/A

    SBIR Phase I 1999 Missile Defense AgencyDepartment of Defense
  5. A Novel Buffer Layer Approach to Epitaxy of InSb on Si for HgCdTe Focal Plane Array Application

    Amount: $65,000.00

    N/A

    SBIR Phase I 1999 Missile Defense AgencyDepartment of Defense
  6. High Performance 2.5 Micron InGaAs/InP TPV Cells Based on Novel Buffer Technology

    Amount: $65,000.00

    Due to a mature material growth and processing technology of InP and InGaAs, lattice-mismatched 2.5 um(0.55 ev )InGaAs/InP is identified as the most promising Thermophotovoltaic(TPV) material system f ...

    SBIR Phase I 1998 Missile Defense AgencyDepartment of Defense
  7. Development of TlGaAs/GaAs materials for High Speed Electronic Devices

    Amount: $69,995.00

    High-performance, low cost monolithic radio-frequency integrated circuits (RFIC) have many applications for ARMY, other DOD components, and commercial site. The need for RFIC operating in the high mm- ...

    SBIR Phase I 2001 ArmyDepartment of Defense
  8. Single-Mode Semiconductor Laser Utilizing Field Interference Effects For 2-5 Micron

    Amount: $70,000.00

    N/A

    SBIR Phase I 1995 National Aeronautics and Space Administration
  9. New Materials For High Performance Sensors Operating Entire Ir Spectrum

    Amount: $70,000.00

    N/A

    SBIR Phase I 1997 National Aeronautics and Space Administration
  10. New Materials For High Performance Sensors Operating Entire Ir Spectrum

    Amount: $599,961.00

    N/A

    SBIR Phase II 1998 National Aeronautics and Space Administration

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