EPITAXIAL LABORATORY, INC.

Company Information
Address 25 Tiana Place
Dix Hills, NY, 11746-5215


Information

DUNS: 877211664

# of Employees: 6


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: Y

Woman Owned: N



Award Charts




Award Listing

  1. Green Diode Lasers (480-550 nm Spectral Regime)

    Amount: $150,000.00

    Despite their broad applications, up to date, diode pumped solid state green lasers are almost exclusively dominate the market due to the lack of low defect or defect-free semiconductor materials with ...

    STTRPhase I2016Department of Defense Army
  2. High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range

    Amount: $149,950.00

    This STTR phase I project aims to develop a novel material system for muti-Watt level, Room Temperature 3.0 to 3.5 micron Quantum Cascade Lasers (QCLs) utilizing our state-of-art in house Mod Gen II m ...

    STTRPhase I2012Navy Department of Defense
  3. Ultra High Efficiency Multi Junction Solar Cells for Space Applications

    Amount: $100,000.00

    Anticipated future space-based mission capabilities will include high-powered platforms supporting high-bandwidth communication. To supply power to these missions higher efficiency solar cells can red ...

    SBIRPhase I2010Air Force Department of Defense
  4. High Efficiency Flexible Thin Multi-Junction Solar Cells

    Amount: $742,329.00

    ELI has recently produced ~16% AM0 efficiency flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficiency, improve ...

    SBIRPhase II2010Air Force Department of Defense
  5. High Efficiency Flexible Thin Multi-Junction Solar Cells

    Amount: $100,000.00

    ELI has recently produced ~16% AM0 efficiency crack-free flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficien ...

    SBIRPhase I2009Air Force Department of Defense
  6. Thin Multijunction Solar Cells

    Amount: $100,000.00

    As future demands are made for higher efficiency (30+ %), improved Watt/weight (1000 W/kg), it is clear that new approach that combine best attribute of crystalline and thin film solar cells to achiev ...

    SBIRPhase I2008Air Force Department of Defense
  7. Development of TlGaAs/GaAs materials for High Speed Electronic Devices

    Amount: $69,995.00

    High-performance, low cost monolithic radio-frequency integrated circuits (RFIC) have many applications for ARMY, other DOD components, and commercial site. The need for RFIC operating in the high mm- ...

    SBIRPhase I2001Army Department of Defense
  8. Novel TlGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor

    Amount: $69,420.00

    N/A

    SBIRPhase I1999Missile Defense Agency Department of Defense
  9. A Novel Buffer Layer Approach to Epitaxy of InSb on Si for HgCdTe Focal Plane Array Application

    Amount: $65,000.00

    N/A

    SBIRPhase I1999Missile Defense Agency Department of Defense
  10. High Performance 2.5 Micron InGaAs/InP TPV Cells Based on Novel Buffer Technology

    Amount: $65,000.00

    Due to a mature material growth and processing technology of InP and InGaAs, lattice-mismatched 2.5 um(0.55 ev )InGaAs/InP is identified as the most promising Thermophotovoltaic(TPV) material system f ...

    SBIRPhase I1998Missile Defense Agency Department of Defense

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government