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Novel Auger Transistors

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 41209
Amount: $64,044.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1998
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
1450 South Rolling Road, Baltimore, MD, 21227
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr. Olaleye Aina
 (410) 455-5594
Business Contact
Phone: () -
Research Institution
N/A
Abstract
Epitaxial Technologies proposes to develop innovative material structures for Auger transistors that can be used for millimeterwave oscillators. We will achieve this objective by performing device designs to determine suitable material structures and epitaxial growth processes. The primary goal of this proposed Phase I effort is to demonstrate the feasibility of Auger transistors by developing techniques for growing antimony and sulphide based heterostructures using molecular beam epitaxy (MBE) and projecting the oscillator performance that can be realised from Auger transistors through material and device designs. In Phase II, we will further optimize the material structures and design and fabricate Auger transistors and millimeterwave oscillators based on them.

* Information listed above is at the time of submission. *

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