Linear Antimony-based HFETs for Microwave and Millimeter Wave Applications

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 41230
Amount: $64,044.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1998
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
1450 South Rolling Road, Baltimore, MD, 21227
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr. Olaleye Aina
 (410) 455-5594
Business Contact
Phone: () -
Research Institution
Epitaxial Technologies proposes to develop novel material and device tech, nologies using antimony-based active channels for highly linear microwave devices that can be used to simultaneously produce low noise and high power. To do this, we will perform materials and device design to determine suitable material structures and epitaxial growth processes. The main goal of this proposed Phase I effort is to demonstrate the feasibility of ultra high linearity HFETs by developing techniques for growing antimony based heterostructures using Molecular Beam Epitaxy (MBE) and demonstrating through material and device design the performance enhancements and cost reductions that can be expected from ultra linear HFET MMICs. In Phase II of the proposed project, we will further optimize the material structures and design and fabricate HFETs with higher output power and IP3, and lower noise performance than currently available FETs.

* Information listed above is at the time of submission. *

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