High Sensitivity InAs-InGaSb Strained-Layer Superlattice Detector Arrays

Award Information
Agency:
Department of Defense
Amount:
$99,487.00
Program:
SBIR
Contract:
HQ0006-05-C-7152
Solitcitation Year:
2004
Solicitation Number:
2004.4
Branch:
Missile Defense Agency
Award Year:
2005
Phase:
Phase I
Agency Tracking Number:
044-0989
Solicitation Topic Code:
MDA04-174
Small Business Information
EPITAXIAL TECHNOLOGIES, LLC
1450 South Rolling Road, Baltimore, MD, 21227
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
Y
Duns:
171899719
Principal Investigator
 Ayub Fathimulla
 Vice President, R&D
 (410) 455-5830
 afathimulla@epitaxialtechnologies.c
Business Contact
 Leye Aina
Title: President
Phone: (410) 455-5594
Email: epiwafers@erols.com
Research Institution
N/A
Abstract
The overall goal of this SBIR project is to develop low cost, low dark current, enhanced quantum efficiency and high sensitivity and uniformity monolithic detectors and arrays having response in spectral range greater than 12 um and operating at temperatures higher than 77K. Epitaxial Technologies' Phase I objective is to establish the feasibility of innovative material growths and device concepts for the detectors and show that they can be used to produce VLWIR arrays exhibiting background-limited performance and improved temperature of operation than the current state-of-the-art (MCT). In the first phase of this program, we propose to develop the InAs/(GaIn)Sb material structures necessary for fabricating detectors having absorption at wavelengths of 8um. The approach will be to use innovative combinations of surface preparation, material growth and passivation technologies to produce and characterize detectors having cut-off wavelength greater than 12 microns using InAs/(GaIn)Sb SLS structures on GaSb substrates. In phase II, we will increase the operating wavelength of the proposed technology to greater than 12.0 um. Further, we will optimize the design, growth and passivation of the InAs/GaInSb SLS material structures and demonstrate prototype 256 x 256 FPAs with high pixel-to-pixel uniformity.

* information listed above is at the time of submission.

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