Eti Instrument Systems Inc.

Company Information
Address 1317 Webster Ave
Fort Collins, CO, 80524


Information

DUNS:

# of Employees: N/A


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. AUTOMATED TOTAL PRECIPITATION GAGE

    Amount: $173,347.00

    THE GAUGE DESCRIBED IN THIS PROPOSAL PROVIDES A MEANS OF AUTOMATING THE PROCESS OF COLLECTING AND MEASURING ATMOSPHERIC HYDROMETERS (PRECIPITATION IN EITHER LIQUID OR ICE PHASE WITH THE ABILITY TO OPE ...

    SBIRPhase II1992Department of Commerce
  2. AUTOMATED TOTAL PRECIPITATION GAGE

    Amount: $33,898.00

    N/A

    SBIRPhase I1991Department of Commerce
  3. "A 128 X 128 ELEMENT INGAAS DETECTOR ARRAY FOR 1.0- 2.5 UM AT 300K"

    Amount: $49,793.00

    WE PROPOSE TO DEVELOP A TWO-DIMENSIONAL INDIUM GALLIUM ARSENIDE DETECTOR ARRAY OF UNPRECEDENTED SIZE (128 X 128 ELEMENTS) FOR ROOM TEMPERATURE OPERATION BETWEEN 1.0 - 2.5 UM. AN INNOVATIVE HYDRIDE VAP ...

    SBIRPhase I1990National Aeronautics and Space Administration
  4. VISIBLE (0.62 UM) SEMICONDUCTOR DIODE LASERS GROWN BY HYDRIDE VAPOR PHASE EPITAXY

    Amount: $49,765.00

    VISIBLE SEMICONDUCTOR DIODE LASERS ARE OF INTEREST FOR OPTICAL RECORDING APPLICATIONS FOR INCREASED DENSITIES AND FOR DIRECT READ AFTER WRITE APPLICATIONS. CURRENTLY AVAILABLE DEVICES BASED ON INGAP/I ...

    SBIRPhase I1990National Aeronautics and Space Administration
  5. STUDY OF ANISOTROPIC ROOM TEMPERATURE CH4/H2 PLASMA ETCHING OF INP INGAAS AND HGCDTE WITH APPLICATIONS TO OPTOELECTRIC DEVICE...

    Amount: $49,806.00

    N/A

    SBIRPhase I1990Defense Advanced Research Projects Agency Department of Defense
  6. "A SIMPLE HIGH PERFORMANCE AVALANCHE PHOTODIODE FOR LONG-WAVELENGTH OPTICAL COMMUNICATIONS"

    Amount: $222,944.00

    FUTURE HIGH SPEED ( 1GBIT) OPTICAL COMMUNICATION SYSTEMS WILL REQUIRE AVALANCHE PHOTODETECTORS (APDS) WHICH OPERATE AT 1300 AND 1550NM WAVELENGTHS. LABORATORY TESTS HAVE SHOWN THAT INGAAS/INP APDS CAN ...

    SBIRPhase II1989National Science Foundation
  7. "HIGH PERFORMANCE INDIUM GALLIUM ARSENIDE ARRAYS FOR THE 1.0-1.7 MICRON SPECTRUM"

    Amount: $497,211.00

    WE PROPOSE TO OPTIMIZE EPITAXIAL LAYERS OF IN.53GA.47AS ALLOYS WHICH DETECT LIGHT IN THE 1.0-1.7 MICRON SPECTRAL REGION. THE GOAL OF THE PROGRAM IS TO BRING THE YIELD OF INGAAS PHOTODIODES TO SUCH A L ...

    SBIRPhase II1989National Aeronautics and Space Administration
  8. A MERGED HYDRIDE/METALORGANIC VPE REACTOR FOR HIGH-PERFORMANCE OPTOELECTRONIC DEVICES

    Amount: $461,000.00

    EPITAXX PROPOSES TO MERGE THE BEST ASPECTS OF HYDRIDE VAPOR PHASE EPITAXY (VPE) AND METALORGANIC CHEICAL VAPOR DEPOSITION (MOCVD) INTO ONE TECHNIQUE TO FABRICATE SUPERIOR INGAASP/INP DETECTORS, LASERS ...

    SBIRPhase II1989Army Department of Defense
  9. DEVELOPMENT OF A NEW VAPOR PHASE EPITAXY (VPE) TECHNIQUE TO PREPARE THE SEMICONDUCTOR- IN 0.53 GA 0.47 AS

    Amount: $521,429.00

    HYDRIDE VAPOR PHASE EPITAXY (VPE) IS A WELL ESTABLISHED GROWTH METHOD FOR DEVICES SUCH AS INGAAS PHOTODETECTORS. RECENTLY, AN IMPORTANT SIMPLIFICATION OF THE METHOD WAS DEMONSTRATED IN WHICH IN-GA ALL ...

    SBIRPhase II1989Air Force Department of Defense
  10. LARGE SIZE (> 1CM) INGAAS PHOTODETECTORS FOR 1.3 TO 2.1 UM

    Amount: $49,411.00

    WE PROPOSE TO DEVELOP A LARGE-SIZE (>1CM DIAMETER) INDIUM GALLIUM ARSENIDE PHOTODETECTOR WITH HIGH QUANTUM EFFICIENCY (>70%) OUT TO 2.1UM FOR FIBER OPTICS, EYESAFE RANGEFINDING, LIDAR AND LASER SEEKIN ...

    SBIRPhase I1989Army Department of Defense

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