Eti Instrument Systems Inc.

Basic Information

1317 Webster Ave
Fort Collins, CO, 80524

Company Profile

n/a

Additional Details

Field Value
DUNS: n/a
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: n/a


  1. AUTOMATED TOTAL PRECIPITATION GAGE

    Amount: $173,347.00

    THE GAUGE DESCRIBED IN THIS PROPOSAL PROVIDES A MEANS OF AUTOMATING THE PROCESS OF COLLECTING AND MEASURING ATMOSPHERIC HYDROMETERS (PRECIPITATION IN EITHER LIQUID OR ICE PHASE WITH THE ABILITY TO OPE ...

    SBIR Phase II 1992 Department of Commerce
  2. AUTOMATED TOTAL PRECIPITATION GAGE

    Amount: $33,898.00

    N/A

    SBIR Phase I 1991 Department of Commerce
  3. "A 128 X 128 ELEMENT INGAAS DETECTOR ARRAY FOR 1.0- 2.5 UM AT 300K"

    Amount: $49,793.00

    WE PROPOSE TO DEVELOP A TWO-DIMENSIONAL INDIUM GALLIUM ARSENIDE DETECTOR ARRAY OF UNPRECEDENTED SIZE (128 X 128 ELEMENTS) FOR ROOM TEMPERATURE OPERATION BETWEEN 1.0 - 2.5 UM. AN INNOVATIVE HYDRIDE VAP ...

    SBIR Phase I 1990 National Aeronautics and Space Administration
  4. VISIBLE (0.62 UM) SEMICONDUCTOR DIODE LASERS GROWN BY HYDRIDE VAPOR PHASE EPITAXY

    Amount: $49,765.00

    VISIBLE SEMICONDUCTOR DIODE LASERS ARE OF INTEREST FOR OPTICAL RECORDING APPLICATIONS FOR INCREASED DENSITIES AND FOR DIRECT READ AFTER WRITE APPLICATIONS. CURRENTLY AVAILABLE DEVICES BASED ON INGAP/I ...

    SBIR Phase I 1990 National Aeronautics and Space Administration
  5. STUDY OF ANISOTROPIC ROOM TEMPERATURE CH4/H2 PLASMA ETCHING OF INP INGAAS AND HGCDTE WITH APPLICATIONS TO OPTOELECTRIC DEVICE...

    Amount: $49,806.00

    N/A

    SBIR Phase I 1990 Defense Advanced Research Projects Agency Department of Defense
  6. "A SIMPLE HIGH PERFORMANCE AVALANCHE PHOTODIODE FOR LONG-WAVELENGTH OPTICAL COMMUNICATIONS"

    Amount: $222,944.00

    FUTURE HIGH SPEED ( 1GBIT) OPTICAL COMMUNICATION SYSTEMS WILL REQUIRE AVALANCHE PHOTODETECTORS (APDS) WHICH OPERATE AT 1300 AND 1550NM WAVELENGTHS. LABORATORY TESTS HAVE SHOWN THAT INGAAS/INP APDS CAN ...

    SBIR Phase II 1989 National Science Foundation
  7. "HIGH PERFORMANCE INDIUM GALLIUM ARSENIDE ARRAYS FOR THE 1.0-1.7 MICRON SPECTRUM"

    Amount: $497,211.00

    WE PROPOSE TO OPTIMIZE EPITAXIAL LAYERS OF IN.53GA.47AS ALLOYS WHICH DETECT LIGHT IN THE 1.0-1.7 MICRON SPECTRAL REGION. THE GOAL OF THE PROGRAM IS TO BRING THE YIELD OF INGAAS PHOTODIODES TO SUCH A L ...

    SBIR Phase II 1989 National Aeronautics and Space Administration
  8. A MERGED HYDRIDE/METALORGANIC VPE REACTOR FOR HIGH-PERFORMANCE OPTOELECTRONIC DEVICES

    Amount: $461,000.00

    EPITAXX PROPOSES TO MERGE THE BEST ASPECTS OF HYDRIDE VAPOR PHASE EPITAXY (VPE) AND METALORGANIC CHEICAL VAPOR DEPOSITION (MOCVD) INTO ONE TECHNIQUE TO FABRICATE SUPERIOR INGAASP/INP DETECTORS, LASERS ...

    SBIR Phase II 1989 Army Department of Defense
  9. DEVELOPMENT OF A NEW VAPOR PHASE EPITAXY (VPE) TECHNIQUE TO PREPARE THE SEMICONDUCTOR- IN 0.53 GA 0.47 AS

    Amount: $521,429.00

    HYDRIDE VAPOR PHASE EPITAXY (VPE) IS A WELL ESTABLISHED GROWTH METHOD FOR DEVICES SUCH AS INGAAS PHOTODETECTORS. RECENTLY, AN IMPORTANT SIMPLIFICATION OF THE METHOD WAS DEMONSTRATED IN WHICH IN-GA ALL ...

    SBIR Phase II 1989 Air Force Department of Defense
  10. LARGE SIZE (> 1CM) INGAAS PHOTODETECTORS FOR 1.3 TO 2.1 UM

    Amount: $49,411.00

    WE PROPOSE TO DEVELOP A LARGE-SIZE (>1CM DIAMETER) INDIUM GALLIUM ARSENIDE PHOTODETECTOR WITH HIGH QUANTUM EFFICIENCY (>70%) OUT TO 2.1UM FOR FIBER OPTICS, EYESAFE RANGEFINDING, LIDAR AND LASER SEEKIN ...

    SBIR Phase I 1989 Army Department of Defense

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