LARGE SIZE (>1CM) INGAAS PHOTODETECTORS FOR 1.3 TO 2.1 UM

Award Information
Agency: Department of Defense
Branch: Army
Contract: N/A
Agency Tracking Number: 9689
Amount: $49,411.00
Phase: Phase I
Program: SBIR
Awards Year: 1989
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Epitaxx Inc
3490 Us Rte 1, Princeton, NJ, 08540
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr Gregory H Olsen
 (609) 452-1188
Business Contact
Phone: () -
Research Institution
N/A
Abstract
WE PROPOSE TO DEVELOP A LARGE-SIZE (>1CM DIAMETER) INDIUM GALLIUM ARSENIDE PHOTODETECTOR WITH HIGH QUANTUM EFFICIENCY (>70%) OUT TO 2.1UM FOR FIBER OPTICS, EYESAFE RANGEFINDING, LIDAR AND LASER SEEKING. THESE DEVICES WILL HAVE LOW DARK CURRENTS FOR HIGH 300 DEG K SENSITIVITY (D* (12)CM (HZ)(1/2/W) AND HAVE SPECIAL DEVICE STRUCTURES FOR RISE/FALL TIMES NEAR 10 NANOSECONDS. EPITAXX IS UNIQUELY QUALIFIED TO PERFORM THIS PROGRAMM AS WE CURRENTLY SELL 3MM DIAMETER INGAAS DETECTORS AND HAVE MADE 5MM PROTOTYPES. THE PHASE I EFFORT WILL STUDY THE EFFECT OF INP SUBSTRATE DEFECTS UPON DEVICE PERFORMANCE. CONVENTIONAL EPITAXX INP/IN53GA47AS STRUCTURES FOR 1.0-1.7UM WILL BE FABRICATED INTO UNPRECEDENTED SIZES OF 5, 7, AND 10MM DIAMETER - ALL ON A SINGLE 2" INP SUBSTRATE - AND TESTED FOR SENSITIVITY AND SPEED. ONE PROTOTYPE 10MM DEVICE WITH A 20NSEC. RISETIME GOAL WILL BE DELIVERED. THE PHASE II EFFORT WILL INCLUDE: I) VAPOR PHASE GROWTH OF IN(X)GA(1-X)AS (.53

* information listed above is at the time of submission.

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