"A 128 X 128 ELEMENT INGAAS DETECTOR ARRAY FOR 1.0 - 2.5 UM AT 300K"

Award Information
Agency:
National Aeronautics and Space Administration
Branch:
N/A
Amount:
$49,793.00
Award Year:
1990
Program:
SBIR
Phase:
Phase I
Contract:
N/A
Agency Tracking Number:
11977
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Epitaxx, Inc.
3490 Us Route One, Princeton, NJ, 08540
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 Gregory H. Olsen
 President & Ceo
 (609) 452-1188
Business Contact
 GREGORY H. OLSEN
Title: PRESIDENT & CEO
Phone: (609) 452-1188
Research Institution
N/A
Abstract
WE PROPOSE TO DEVELOP A TWO-DIMENSIONAL INDIUM GALLIUM ARSENIDE DETECTOR ARRAY OF UNPRECEDENTED SIZE (128 X 128 ELEMENTS) FOR ROOM TEMPERATURE OPERATION BETWEEN 1.0 - 2.5 UM. AN INNOVATIVE HYDRIDE VAPOR PHASE EPITAXY CRYSTAL GROWTH METHOD AND FIBER OPTIC PROBING TECHNIQUE TO MEASURE QUANTUM EFFICIENCY AT THE WAFER LEVEL WILL BE DEVELOPED AND APPLIED TO DETECTOR ARRAY DEVELOPMENT. PHASE I MILESTONES INCLUDE THE GROWTH, FABRICATION AND DELIVERY OF 30 X 30 UM PIXELS (SPACED 50 X 50 UM) OF CONVENTIONAL EPITAXX IN.53GA.47AS DETECTORS (FOR 1.0 - 1.7 UM) ON A 2" DIAMETER INP SUBSTRATE TOGETHER WITH PROBE DATA. PHASE I PERFORMANCEGOALS INCLUDE 80% QE (1.3 UM) AND 300K DARK CURRENT (-5V) DENSITY BELOW 1 X 10(-6) AMP/CM(2). PHASE II MILESTONES INCLUDE SIMILAR GEOMETRY PIXELS OF IN.8GA.2AS/INAS.6P.4 (FOR 1.0 TO 2.5 UM SENSITIVITY) GROWTH ON 3" DIAMETER INP SUBSTRATES AND FABRICATION AND DELIVERY OF 2 WORKING 128 X 128 DETECTOR ARRAYS MOUNTED ON A 2-DIMENSIONAL RETICON MULTIPLEXER. PERFORMANCE GOALS INCLUDE 1% PIXEL DROPOUTS AND 300K D* > 3 X 10(11) CM(HZ)(1/2)/W AT 2.5 UM. CONSULTANTS INCLUDE PROFS. W.F. KOSONOCKY (NJIT) AND JIM PALMER (UNIV. ARIZONA).

* information listed above is at the time of submission.

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