VISIBLE (0.62 UM) SEMICONDUCTOR DIODE LASERS GROWN BY HYDRIDE VAPOR PHASE EPITAXY

Award Information
Agency:
National Aeronautics and Space Administration
Amount:
$49,765.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
N/A
Award Year:
1990
Phase:
Phase I
Agency Tracking Number:
11976
Solicitation Topic Code:
N/A
Small Business Information
Epitaxx, Inc.
3490 Us Route One, Princeton, NJ, 08540
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Donald E. Ackley
 Chief Scientific Officer
 (609) 452-1188
Business Contact
 GREGORY H. OLSEN
Title: PRESIDENT & CEO
Phone: (609) 452-1188
Research Institution
N/A
Abstract
VISIBLE SEMICONDUCTOR DIODE LASERS ARE OF INTEREST FOR OPTICAL RECORDING APPLICATIONS FOR INCREASED DENSITIES AND FOR DIRECT READ AFTER WRITE APPLICATIONS. CURRENTLY AVAILABLE DEVICES BASED ON INGAP/INGAALP HETEROSTRUCTURES GROWN BY MOCVD OPERATE AT WAVELENGTHS OF 0.67 UM. DIFFICULTIES ARISE IN REDUCING THE OPERATING WAVELENGTH OF THESE STRUCTURES DUE TO THE NEED TO INCORPORATE AL INTO THE ACTIVE LAYERS OF THE DEVICES. WE PROPOSE THE USE OF INGAP LATTICE-MATCHED AND STRAINED LAYERS GROWN BY HYDRIDE VPE ON GAASP SUBSTRATES AND BUFFER LAYERS TO ACHIEVE OPERATING WAVELENGTHS AS SHORT AS 0.62 UM. DIODE LASERS GROWN BY VPE WITH GAASP ACTIVE LAYERS AND INGAP CLADDINGS HAVE ALREADY DEMONSTRATED OPERATING WAVELENGTHS AS SHORT AS 0.68 UM. THEUSE OF INGAP QUANTUM WELL STRAINED ACTIVE LAYERS AND WIDE-GAP INGAP CLADDING LAYERS LATTICE-MATCHED TO GAASP INSTEAD OF GAAS WILL ALLOW THE REDUCTION IN OPERATING WAVELENGTHS WITHOUT THE NEED TO ADD AL TO THE ACTIVE LAYERS. THESE STRUCTURES SHOULD PROVIDE AN ATTRACTIVE ALTERNATIVE TO INGAP/INGAALP DEVICES FOR VISIBLE LASER STRUCTURES.

* information listed above is at the time of submission.

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