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Nonequilibrium Electron Transport in InP Based Hybrid Heterojunction

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 32045
Amount: $60,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1996
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
21002 N. 19th Ave., Suite 5
Phoenix, AZ 85027
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Michael E. Givens, Ph.d.
 (602) 581-3663
Business Contact
Phone: () -
Research Institution

InP based heterojunction bipolar transistors (HBTs) exhibit proven potential for use in high performance digital integrated circuits and discrete microwave components. For high speed applications, it is desirable to utilize structures that have been designed to promote high levels of nonequilibrium electron transport as this allows realization of higher electron velocities than possible for diffusive charge transport. Devices based on InP are especially well suited for effective nonequilibrium operation due to the high saturated electron velocities, small electron masses, and large G-L intervalley separations exhibited by these materials systems. Phase I will examine InP based HBT structures grown by MOCVD that exhibit varying degrees of nonequilibrium electron transport due to 1) hot electron injection over an abrupt emitter-base potential barrier, 2) built-in electric field acceleration of electrons in a compositionally graded base layer, or 3) a hybrid combination of hot electron launching and electric field acceleration. The effects of various structural parameters on overall hybrid device performance will be evaluated and the approach(es) suitable for future Phase II optimization and high speed characterization will be identified based on the perceived capability to effectively utilize nonequilibrium electron transport characteristics.

* Information listed above is at the time of submission. *

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