Development of Ga2O3 Epitaxial Layers and Heterostructures for Power Device Applications

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-19-C-0030
Agency Tracking Number: F171-018-1041
Amount: $749,948.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: AF171-018
Solicitation Number: 2017.1
Timeline
Solicitation Year: 2017
Award Year: 2019
Award Start Date (Proposal Award Date): 2018-12-01
Award End Date (Contract End Date): 2020-12-01
Small Business Information
6595 Edenvale Blvd, Eden Prairie, MN, 55346
DUNS: 054898964
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Andrei Osinsky
 (952) 937-7505
 andrei.osinsky@agnitron.com
Business Contact
 Ross Miller
Phone: (952) 937-7505
Email: ross.miller@agnitron.com
Research Institution
N/A
Abstract
This Phase II program sets out to capitalize on recent advances in epitaxial growth of -Ga2O3 which have the potential to significantly improve upon the performance of currently available power electronics devices. Specifically, -Ga2O3, offers fundamental properties such as its ability to withstand very large electric fields that suggest its use as a power electronics material will lead to device performance beyond even that of SiC and GaN. We propose to determine the growth parameters that yield high quality, doped -Ga2O3 epitaxial layers and (AlxGa1-x)2O3/-Ga2O3 epitaxial heterostructures on bulk (010) -Ga2O3 substrates. These structures will be optimized to enhance the properties of the MOSFET and HEMT (also known as MODFET) devices that can be fabricated from them. For this program we have assembled a team of renowned scientists with expertise in the growth and characterization of semiconductor oxides as well as device fabrication.

* Information listed above is at the time of submission. *

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