Large Area, High Speed Photodiode Using Metal-Semiconductor-Metal (MSM) Device

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$749,401.00
Award Year:
1998
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
35949
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
F&h Applied Science Assoc.,
P.O. Box 853, Philadelphia, PA, 19119
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Robert Fischl
(215) 248-3418
Business Contact:
() -
Research Institution:
n/a
Abstract
This proposal is concerned with a large area, high speed photodetector with gain. It involves the incorporation of a metal-semiconductor-metal (MSM) diode as the anode in a large area phototube that currently uses a Schottky diode. Present photodetectors either have a large area and low speed or a small area and high speed. The proposed phototube, or the intensified photodiode (IPD) is expected to exhibit a gain of greater than 10E3 , noise figure less than 1.5 dB, and a bandwidth of greater than 10 GHz, while maintaining a 10mm or larger active area. The device will be useful in free space terrestrial, shipboard and satellite communications, as well as a variety of lidar applications. Phase I is the feasibility study, i.e., the design of a prototype of the large area, high speed photodetector (EDMSM-IPD) device, while Phase I Option is the proof-of-concept demonstration which characterizes and demonstrates that the concept works.

* information listed above is at the time of submission.

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