High Power Phase Shifters

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00178-04-C-1045
Agency Tracking Number: N041-057-1200
Amount: $99,658.00
Phase: Phase I
Program: SBIR
Awards Year: 2004
Solitcitation Year: 2004
Solitcitation Topic Code: N04-057
Solitcitation Number: 2004.1
Small Business Information
F&H APPLIED SCIENCE ASSOC., INC.
P.O. Box 853, Moorestown, NJ, 08057
Duns: 175323443
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Zygmond Turski
 Principal Investigator
 (856) 235-6781
 zturski@fhasa.com
Business Contact
 Robert Fischl
Title: President
Phone: (856) 235-6781
Email: rfischl@fhasa.com
Research Institution
N/A
Abstract
Recent advent, and significant progress made in the wide-band-gap semiconductor technology offer today a promise for a superior high power phase shifter. More specifically, emerging Gallium Nitrate (GaN) HEMT devices are shown to operate in extreme temperatures (~600C), exhibiting high breakdown voltages (~100V) and high current densities (~1.5A/mm). In order to meet these challenging technical requirements in a cost effective manner, F&H proposes to develop a GaN HEMT based MMIC high power phase shifter. During the Phase I of this program GaN HEMT device switch characteristics will be measured and modeled. Models derived will be synthesized with appropriate phase shift elements, and overall performance will be optimized in S-Band. The results will be empirically verified using discrete GaN HEMT devices in lumped element phase shifter circuits. Ultimately, the feasibility of a GaN HEMT based high power phase shifter will be determined. In addition to meeting Navy requirements for shipboard radar, cost effective MMIC high power phase shifters will enable migration of many fixed antennae to beam steered versions to include LMDS, cellular (3G & 4G) and satellite applications. Vast markets associated with these applications will naturally lead to economy of scale pricing, in line with Navy objectives.

* information listed above is at the time of submission.

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