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FAIRFIELD CRYSTAL TECHNOLOGY, LLC
UEI: L8NGYMXQN9H6
# of Employees: N/A
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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High-quality, low-cost GaN single crystal substrates for high-power devices
Amount: $84,107.00The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key a ...
SBIRPhase II2015Department of Energy ARPA-E -
High-quality, low-cost GaN single crystal substrates for high-power devices
Amount: $225,000.00The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key a ...
SBIRPhase I2013Department of Energy ARPA-E -
SBIR Phase II:A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors
Amount: $500,000.00This Small Business Innovation Research (SBIR) Phase II project is to demonstrate a novel technique for producing large-diameter freestanding GaN wafers and substrates. Despite the research efforts i ...
SBIRPhase II2010National Science Foundation -
SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors
Amount: $150,000.00This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitab ...
SBIRPhase I2010National Science Foundation -
SBIR Phase I: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors
Amount: $100,000.00This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel technique for producing freestanding GaN wafers and substrates. High-quality freestanding GaN substrates are imp ...
SBIRPhase I2009National Science Foundation -
SBIR Phase I: Large Diameter CdS Single Crystal Substrates for II-VI-based Light Emitters and Displays
Amount: $100,000.00This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel crystal growth technique for volume production of large diameter, high quality cadmium sulfide (CdS) single crys ...
SBIRPhase I2009National Science Foundation -
SBIR Phase I: Large Diameter ZnS Single Crystal Substrates for II-VI-based UV-Detectors
Amount: $100,000.00This Small Business Innovation Research Phase I research project will investigate a novel sublimation crystal growth technique for producing large diameter, high quality zinc sulfide (ZnS) single crys ...
SBIRPhase I2008National Science Foundation -
A Novel Growth Technique for Large Diameter AlN Single Crystal
Amount: $750,000.00Nitride-based, high-brightness, ultraviolet, visible, and white light emitting diodes are candidate devices for replacing incandescent light bulbs and fluorescent light fixtures in general illuminatio ...
SBIRPhase II2006Department of Energy -
Large Diameter Zinc Selenide (ZnSe) Single Crystals for Radiation Detectors
Amount: $99,994.00Tellurium-doped single-crystal ZnSe, or ZnSe(Te), is an important material for fabricating the radiation detectors needed for nuclear physics research. To date, there is no efficient crystal growth t ...
SBIRPhase I2006Department of Energy -
A Novel Growth Technique for Large Diameter AlN Single Crystal
Amount: $99,586.0078072S III-V nitride-based, high brightness, UV and visible light emitting diodes (LEDs) are of a great interest for general illumination, but the low light output efficiencies of current high brightn ...
SBIRPhase I2005Department of Energy
