Fairfield Crystal Technology

Company Information
Address 8 South End Plaza
New Milford, CT, 06776-


Information

DUNS: 168455116

# of Employees: N/A


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. High-quality, low-cost GaN single crystal substrates for high-power devices

    Amount: $225,000.00

    The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key a ...

    SBIRPhase I2013ARPA-E Department of Energy
  2. SBIR Phase II:A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

    Amount: $500,000.00

    This Small Business Innovation Research (SBIR) Phase II project is to demonstrate a novel technique for producing large-diameter freestanding GaN wafers and substrates. Despite the research efforts i ...

    SBIRPhase II2010National Science Foundation
  3. SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors

    Amount: $150,000.00

    This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitab ...

    SBIRPhase I2010National Science Foundation
  4. SBIR Phase I: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

    Amount: $100,000.00

    This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel technique for producing freestanding GaN wafers and substrates. High-quality freestanding GaN substrates are imp ...

    SBIRPhase I2009National Science Foundation
  5. SBIR Phase I: Large Diameter CdS Single Crystal Substrates for II-VI-based Light Emitters and Displays

    Amount: $100,000.00

    This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel crystal growth technique for volume production of large diameter, high quality cadmium sulfide (CdS) single crys ...

    SBIRPhase I2009National Science Foundation
  6. SBIR Phase I: Large Diameter ZnS Single Crystal Substrates for II-VI-based UV-Detectors

    Amount: $100,000.00

    This Small Business Innovation Research Phase I research project will investigate a novel sublimation crystal growth technique for producing large diameter, high quality zinc sulfide (ZnS) single crys ...

    SBIRPhase I2008National Science Foundation
  7. A Novel Growth Technique for Large Diameter AlN Single Crystal

    Amount: $750,000.00

    Nitride-based, high-brightness, ultraviolet, visible, and white light emitting diodes are candidate devices for replacing incandescent light bulbs and fluorescent light fixtures in general illuminatio ...

    SBIRPhase II2006Department of Energy
  8. Large Diameter Zinc Selenide (ZnSe) Single Crystals for Radiation Detectors

    Amount: $99,994.00

    Tellurium-doped single-crystal ZnSe, or ZnSe(Te), is an important material for fabricating the radiation detectors needed for nuclear physics research. To date, there is no efficient crystal growth t ...

    SBIRPhase I2006Department of Energy
  9. A Novel Growth Technique for Large Diameter AlN Single Crystal

    Amount: $99,586.00

    78072S III-V nitride-based, high brightness, UV and visible light emitting diodes (LEDs) are of a great interest for general illumination, but the low light output efficiencies of current high brightn ...

    SBIRPhase I2005Department of Energy

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