FERMIONICS CORP.

Company Information

Company Name
FERMIONICS CORP.
Address
4555 Runway St
Simi Valley, CA, 93063
Phone
1 805-582-0155
URL
n/a
DUNS
37553609
Number of Employees
25
Minority Owned

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$2,510,905.00
34
SBIR Phase II
$10,134,297.00
18
STTR Phase I
$65,000.00
1
Chart code to be here

Award List

  1. EPITAXIAL IR MATERIALS TECHNOLOGY FOR HIGH PERFORMANCE 2ND GENERATION SYSTEMS

    Amount: $310,800.00

    IN THE LAST SEVERAL YEARS, UNDER EXTENSIVE GOVERNMENT AND INDUSTRY R&D EFFORTS, GREAT ACHIEVEMENTS HAVE BEEN ACCOMPLISHED IN THE DEVELOPMENT OF HGCDTE INFRARED TECHNOLOGY. LWIR INFRARED FOCAL PLANE AR ...

    SBIR Phase II 1989 ArmyDepartment of Defense
  2. MILLIMETER-WAVE OPTICAL WAVEGUIDE MODULATOR

    Amount: $502,240.00

    AN OPTICAL WAVEGUIDE INTENSITY MODULATOR OPERATING AT NEAR 1.5 M WITH 3-DB BANDWIDTH EXCEEDING 20 GHZ IS PROPOSED BASED ON PROVEN TECHNOLOGIES OF ELECTROABSORPTION IN INGAASP/INP HETEROSTRUCTURE MATUR ...

    SBIR Phase II 1992 NavyDepartment of Defense
  3. Low Dimensional 2-5 Micron Semiconductor Lasers

    Amount: $375,000.00

    Theoretical study of Auger recombination in HgCdTe quantum wells, quantum wires, and quantum dots with mid-IR lasing wavelength (2-5 um) is proposed to compare with Auger coefficient in double heteros ...

    SBIR Phase II 1994 Air ForceDepartment of Defense
  4. MERCURY CADMIUM TELLURIDE JUNCTION FIELD-EFFECT TRANSISTOR FOR IR IMAGING

    Amount: $60,096.00

    Each pixel site in HgCdTe consists of not a p-n junction diode, but an n-channel floating gate field-effect transistor in this phase I project. Holes and electrons generated as a result of incoming ph ...

    SBIR Phase I 1994 Missile Defense AgencyDepartment of Defense
  5. Infrared Material Growth and Detector Processing Technology

    Amount: $592,858.00

    Infrared detectors have wide applications in missile guidance, surveillance and smart ammunition. Within the infrared spectrum, multi-color detection is highly desirable. Among the two color detectors ...

    SBIR Phase II 1994 ArmyDepartment of Defense
  6. Semiconductor Optical Amplifiers for Microwave Applications

    Amount: $175,000.00

    There are three major issues about the semiconductor amplifiers design to be addressed here: 1. that the design meets the microwave applications' requirements in term of noise, bandwidth and dynamic r ...

    SBIR Phase II 1994 ArmyDepartment of Defense
  7. ROOM TEMPERATURE INFRARED FOCAL PLANE ARRAY IMAGING RADIOMETER

    Amount: $59,522.00

    Currently, room temperature infrared cameras are produced on thermister and pyrielectric based FPAs. Theoretically, semiconductor based FPAs should offer the best performance. In this program, we prop ...

    SBIR Phase I 1994 Air ForceDepartment of Defense
  8. High Dynamic Range Fiber-Optic Link for C3I Applications

    Amount: $69,992.00

    For Navy's multi-function phased array antenna systems, in order to serve the command, control, communication and intelligence(C3I) functions, high spurious-free dynamic range fiber optic link is a pr ...

    SBIR Phase I 1995 NavyDepartment of Defense
  9. Miniature Two Color Infrared Detector

    Amount: $600,000.00

    We propose to employ an innovative diffusion process to fabricate LPE HgCdTe two color detector arrays. This diffusion process is particularly suitable for producing room temperature MWIR HgCdTe phot ...

    SBIR Phase II 1998 NavyDepartment of Defense
  10. Miniature Two Color Infrared Detector

    Amount: $70,000.00

    We propose to employ an innovative diffusion process to fabricate LPE HgCdTe two color detector arrays. This diffusion process is particularly suitable for producing room temperature MWIR HgCdTe phot ...

    SBIR Phase I 1996 NavyDepartment of Defense

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