Next-Generation Detector and Imager Development

Award Information
Agency:
Department of Energy
Amount:
$99,971.00
Program:
SBIR
Contract:
DE-FG02-10ER85943
Solitcitation Year:
2010
Solicitation Number:
DE-FOA-0000161
Branch:
N/A
Award Year:
2010
Phase:
Phase I
Agency Tracking Number:
95095
Solicitation Topic Code:
44 d
Small Business Information
American Semiconductor, Inc.
3100 S. Vista Avenue, Suite 230, Boise, ID, 83705
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
076338677
Principal Investigator
 Richard Hayhurst
 Dr.
 (208) 336-2773
 rickhayhurst@americansemi.com
Business Contact
 Lorelli Hackler
Title: Dr.
Phone: (208) 336-2773
Email: lhackler@americansemi.com
Research Institution
N/A
Abstract
Improvements in silicon-on-insulator (SOI) technology have resulted in development of monolithic chip designs for radiation image sensors and particle detectors by facilitating the use of the handle silicon layer for the detectors and the SOI layer for the readout circuits. Unfortunately, even the most advanced SOI-based imagers are still limited in effectiveness due to threshold (Vt) shifts when bias voltages are applied to fully deplete the handle silicon for detector performance. The required bias voltage range causes severe shifts in the Vt of the CMOS transistors of the readout circuitry. Flexfet SOI

* information listed above is at the time of submission.

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