Next-Generation Detector and Imager Development

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-FG02-10ER85943
Agency Tracking Number: 95095
Amount: $99,971.00
Phase: Phase I
Program: SBIR
Awards Year: 2010
Solicitation Year: 2010
Solicitation Topic Code: 44 d
Solicitation Number: DE-FOA-0000161
Small Business Information
American Semiconductor, Inc.
3100 S. Vista Avenue, Suite 230, Boise, ID, 83705
DUNS: 076338677
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Richard Hayhurst
 Dr.
 (208) 336-2773
 rickhayhurst@americansemi.com
Business Contact
 Lorelli Hackler
Title: Dr.
Phone: (208) 336-2773
Email: lhackler@americansemi.com
Research Institution
N/A
Abstract
Improvements in silicon-on-insulator (SOI) technology have resulted in development of monolithic chip designs for radiation image sensors and particle detectors by facilitating the use of the handle silicon layer for the detectors and the SOI layer for the readout circuits. Unfortunately, even the most advanced SOI-based imagers are still limited in effectiveness due to threshold (Vt) shifts when bias voltages are applied to fully deplete the handle silicon for detector performance. The required bias voltage range causes severe shifts in the Vt of the CMOS transistors of the readout circuitry. Flexfet SOI

* information listed above is at the time of submission.

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