Next-Generation Detector and Imager Development

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$99,971.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
DE-FG02-10ER85943
Award Id:
99406
Agency Tracking Number:
95095
Solicitation Year:
n/a
Solicitation Topic Code:
44 d
Solicitation Number:
n/a
Small Business Information
3100 S. Vista Avenue, Suite 230, Boise, ID, 83705
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
076338677
Principal Investigator:
RichardHayhurst
Dr.
(208) 336-2773
rickhayhurst@americansemi.com
Business Contact:
LorelliHackler
Dr.
(208) 336-2773
lhackler@americansemi.com
Research Institute:
n/a
Abstract
Improvements in silicon-on-insulator (SOI) technology have resulted in development of monolithic chip designs for radiation image sensors and particle detectors by facilitating the use of the handle silicon layer for the detectors and the SOI layer for the readout circuits. Unfortunately, even the most advanced SOI-based imagers are still limited in effectiveness due to threshold (Vt) shifts when bias voltages are applied to fully deplete the handle silicon for detector performance. The required bias voltage range causes severe shifts in the Vt of the CMOS transistors of the readout circuitry. Flexfet SOI

* information listed above is at the time of submission.

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