NEW CHROMIUM-ACTIVATED CRYSTALS FOR DIODE-PUMPED LASERS OPERATING IN THE NEAR INFRARED

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$496,132.00
Award Year:
1992
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
12492
Agency Tracking Number:
12492
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
510-a Herndon Pkwy, Herndon, VA, 22070
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr Horacio R Verdun
(703) 471-7671
Business Contact:
() -
Research Institute:
n/a
Abstract
THE RECENT DEVELOPMENT OF HIGH-POWER GAALAS DIODE LASER ARRAYS EMITTING IN THE 740-890 UM REGION ENCOURAGES THE SEARCH FOR NEW CHROMIUM-DOPED CRYSTALS FOR NEAR-INFRARED TUNABLE LASERS WITH POTENTIAL FOR IMPROVED PERFORMANCE. AMONG THE MANY CRYSTAL HOSTS, THERE ARE THOSE WITH STRUCTURE POSSESSING DISTORTED OCTAHEDRAL SITES WITH APPROPRIATE SYMMETRIES FOR THE PRODUCTION OF LEVEL SPLITTING AND LARGE ELECTRIC DIPOLE OSCILLATOR STRENGTHS REQUIRED FOR THE EFFICIENT OPERATION OF THESE LASERS. IT IS PROPOSED HERE TO CONDUCT THE DEVELOPMENT OF THE GROWTH CONDITIONS AND THE OPTIMIZATION OF THE DOPANT CONCENTRATION FOR CHROMIUM-DOPED CRYSTALS OF UNIQUE STRUCTURE AND COMPOSITION IN ORDER TO ACHIEVE EFFICIENT ROOMTEMPERATURE TUNABLE LASER OPERATION IN THE NEAR INFRARED UNDER DIODE-LASER PUMPING.

* information listed above is at the time of submission.

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