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8k x 8k Delta Doped 3D Advanced Hybrid Detector Prototype For UV

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: 80NSSC19C0485
Agency Tracking Number: 193535
Amount: $124,694.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: S1
Solicitation Number: SBIR_19_P1
Solicitation Year: 2019
Award Year: 2019
Award Start Date (Proposal Award Date): 2019-08-19
Award End Date (Contract End Date): 2020-02-18
Small Business Information
1415 Bond Street, Suite 155
Naperville, IL 60563-2769
United States
DUNS: 080307250
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Robert Patti
 (630) 561-6813
Business Contact
 Ken Albright
Phone: (228) 813-6127
Research Institution

NHanced Semiconductors proposes to design, fabricate, assemble and test an 8k x 8k delta doped 3D Advanced Hybrid Detector (AHD) prototype targeted for the deep to near UV spectrum (90nm ndash; 400nm).nbsp;The detector prototype will contain sixty-four 1024x1024 pixel 268.4mm23D AHD chiplets, tiled on a 200mm interposer wafer in an 8x8 array.We intend to leverage our design experience and our state of the art integration technologies (Direct Bond Interconnect - DBIreg; technology and die-to-wafer transfer printing technology)to perform intimate sensor to ROIC 3D integration for the detector chiplets and then 2.5D die-to-wafer tiling on a silicon circuit card. Our technologies will allowimproved granularity, reliability, noise, speed and power performance. All, extremely relevant features for NASA.The Phase I development sets the ground work to ensure a successful Phase II outcome as well as helping to ensure the targeted device does in fact fulfill a desirable application. The Phase I results, high level designs, design simulation validation and complete specifications, are vital to guaranteeing the final form, fit and functionality.

* Information listed above is at the time of submission. *

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