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CMOS Integrated With Float Zone Pixel Sensor

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-SC0020461
Agency Tracking Number: 249533
Amount: $199,904.08
Phase: Phase I
Program: SBIR
Solicitation Topic Code: 32c
Solicitation Number: DE-FOA-0002145
Timeline
Solicitation Year: 2020
Award Year: 2020
Award Start Date (Proposal Award Date): 2020-02-18
Award End Date (Contract End Date): 2020-11-17
Small Business Information
1415 Bond Street Suite 155
Naperville, IL 60563-2769
United States
DUNS: 080307250
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Robert Patti
 (331) 701-7070
 rpatti@nhanced-semi.com
Business Contact
 Robert Patti
Phone: (331) 701-7070
Email: rpatti@nhanced-semi.com
Research Institution
N/A
Abstract

Silicon-based sensors are central to particle physics experiments and particle tracking detectors. Users now demand smaller mass, higher data rate, smaller pixels, and sophisticated front-end processing. Low Energy Physics also requires good single point detection in an environment strongly limited by multiple coulomb scattering. New technologies must reduce cost and maintain a low power budget while improving speed and granularity. Currently, there is no cost-effective way to connect arrays of radiation- resistant integrated circuits to thinned lowered radiation length) high-resistivity silicon sensors with interconnect pitch of 30µm or less. NHanced proposes to design, fabricate, and assemble a detector in two layers, using our proven 3D bonding technology at our foundry in North Carolina. One layer will be a ReadOut Integrated Circuit ROIC) built in a technology node that guarantees a cost effective solution with good radiation hardness and speed. The second layer will be a silicon pixel sensor, built on thinned 20µm-100µm) float zone wafers to minimize multiple scattering noise. We will bond these heterogeneous layers using our in- house Direct Bond Interconnect DBI®) technology, providing an interconnect pitch of less than 20µm. All communication will be through vertical interconnects, so the devices will be fully abuttable with no “dead space” along the edges. The huge number of very short vertical interconnects will provide an enormous data rate while reducing the power budget. Our fabrication facility has over 20 years’ experience in fast prototyping. We have provided 3D integration for many customers and applications, and have successfully processed wafers of non- standard thickness. Phase I development sets the groundwork to ensure a successful Phase II outcome. On one hand, it will focus on the completion of the front-end design of the Advanced Hybrid Detector AHD) ROIC and sensor. On the other hand, we will plan and budget for the Phase II prototype, which includes: 1) ROIC layout completion and tape-out, 2) ROIC testing, 3) Chiplet assembly, 4) PCB design of test circuit card, 5) final functional testing, and 6) study of an improved prototype design to increase the Technology Readiness Level TRL) and the scope of applications. We will provide a specification document for the prototype and a final report of the results garnered during Phase I. Our technology permits heterogeneous integration, allowing the ROIC to be built in the most advanced technology node. The result will be higher resolution, smaller footprint, and lower cost. 3D integration provides plentiful interconnect, higher speed, lower power, and greater flexibility. These advantages are relevant to both high and low energy physics in particle trackers and other experiments. In the future, the technology will apply to commercial applications such as digital X-rays and PET scanners.

* Information listed above is at the time of submission. *

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