UV-ENHANCED OMPVE PROCESS FOR LOW TEMPERATURE HGCDTE EPITAXY

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$311,000.00
Award Year:
1986
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
2360
Agency Tracking Number:
2360
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7600 Standish Pl, Rockville, MD, 20855
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Michael G Ury
(301) 251-0300
Business Contact:
() -
Research Institution:
n/a
Abstract
THE AVAILABILITY OF HIGH SENSITIVITY AND RESOLUTION INFRARED DETECTORS FOR THE ARMY IS CURRENTLY LIMITED BY THE PRODUCTION TECHNIQUESNOW USED FOR CREATING EPITAXIAL LAYERS OF MERCURY - CADMIUM - TELLURIDE. IN PARTICULAR, IT IS IMPORTANT TO REDUCE THE TEMPERATURE AT WHICH THE EPITAXY OCCURS, AND THERE IS DATA THAT THIS CAN BE ACCOMPLISHED THROUGH THE USE OF BROAD-BAND ULTRAVIOLET RADIATION. PHASE I OF THIS EFFORT IS AIMED AT DEMONSTRATING THE TECHNICAL FEASIBILITY OF DEPOSITING ACCEPTABLE FILMS OF MERCURY TELLURIDE ON CADMIUM TELLURIDE SUBSTRATES AT HIGH RATES AND AT LOW TEMPERATURES BY PHOTODISSOCIATION OF ORGANOMETALLIC COMPOUNDS, USING PROPRIETARY ELECTRODELESS ULTRAVIOLET SOURCES. A REACTION CHAMBER WILL BE USED WHICH WILL ALLOW US TO PRODUCE BOTH REACTIONS IN THE GAS PHASE AND ON THE SURFACE OF THE SUBSTRATE. THE USE OF TWO UV LAMPS WITH OPTIMIZED SPECTRAL OUTPUTS SHOULD RESULT IN SUITABLY HIGH DEPOSITION RATES AT LOW TEMPERATURES.

* information listed above is at the time of submission.

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