Gain Electronics Corp

Basic Information

22 Chubb Wy
Somerville, NJ, 08876

Company Profile

n/a

Additional Details

Field Value
DUNS: n/a
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 30


  1. PATTERNING OF GAAS AND ALGAAS ULTRA-SUBMICRON DEVICE STRUCTURES

    Amount: $52,000.00

    THE PERFORMANCE OF DEVICES AND INTEGRATED CIRCUITS USING SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTORS (SDHT) HAS INCREASED DRAMATICALLY IN THE PAST YEARS. A LARGE PART OF THAT PERFORMANCE IMPROVEMENT ...

    SBIR Phase II 1987 ArmyDepartment of DefenseDepartment of Defense
  2. HIGH EFFICIENCY MONOLITHIC GUNN OSCILLATORS

    Amount: $51,778.00

    MOST GUNN DIODE OSCILLATOR APPLICATIONS CURRENTLY EMPLOY A DISCRETE GUNN DIODE EMBEDDED INTO EITHER A HYBRID OR A WAVEGUIDE MATCHING CIRCUIT. NEXT GENERATION MILITARY SYSTEMS WOULD BENEFIT FROM A MONO ...

    SBIR Phase I 1987 ArmyDepartment of DefenseDepartment of Defense
  3. MODULATION DOPED FETS ON HETEROSTRUCTURE LAYERS (SDHT, HEMT, TEGFET, MODFET) ARE OF PRIME INTEREST FOR FUTURE HIGH SPEED CIRCUITS WITH IMPROVED PERFORMANCE CHARACTERISTICS.

    Amount: $59,682.00

    MODULATION DOPED FETS ON HETEROSTRUCTURE LAYERS (SDHT, HEMT, TEGFET, MODFET) ARE OF PRIME INTEREST FOR FUTURE HIGH SPEED CIRCUITS WITH IMPROVED PERFORMANCE CHARACTERISTICS. CIRCUITS BASED ON SDHT TECH ...

    SBIR Phase I 1986 Air ForceDepartment of DefenseDepartment of Defense
  4. PATTERNING OF GAAS AND ALGAAS ULTRA-SUBMICRON DEVICE STRUCTURES

    Amount: $72,847.00

    N/A

    SBIR Phase I 1986 ArmyDepartment of DefenseDepartment of Defense

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