HIGH EFFICIENCY MONOLITHIC GUNN OSCILLATORS

Award Information
Agency:
Department of Defense
Amount:
$51,778.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Army
Award Year:
1987
Phase:
Phase I
Agency Tracking Number:
5895
Solicitation Topic Code:
N/A
Small Business Information
Gain Electronics Corp
22 Chubb Wy, Somerville, NJ, 08876
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 THOMAS HIERL
 (201) 218-4630
Business Contact
Phone: () -
Research Institution
N/A
Abstract
MOST GUNN DIODE OSCILLATOR APPLICATIONS CURRENTLY EMPLOY A DISCRETE GUNN DIODE EMBEDDED INTO EITHER A HYBRID OR A WAVEGUIDE MATCHING CIRCUIT. NEXT GENERATION MILITARY SYSTEMS WOULD BENEFIT FROM A MONOLITHIC DESIGN WHICH INCORPORATES THE GUNN DIODE AND ITS ASSOCIATED MATCHING CIRCUITRY ONTO ONE GAAS SUBSTRATE. THIS APPROACH OFFERS SEVERAL ADVANTAGES WHICH INCLUDE LOWER UNIT COST, BETTER REPRODUCIBILITY, SMALLER SIZE, LESS WEIGHT, AND BETTER PERFORMANCE. THIS PROGRAM WILL OPTIMIZE THE DESIGN OF A MONOLITHIC GUNN OSCILLATOR FOR OPERATION AT 35 GHZ PHASE I EFFORTS INCLUDE THE OPTIMIZATION OF THE DOPING PROFILE FOR MAXIMUM POWER AND EFFICIENCY AND THE DEVELOPMENT OF THE PROCESS TECHNOLOGY FOR PLANAR DEVICES. PLANAR DISCRETE GUNN DIODES WILL BE FABRICATED AND EVALUATED. IN PHASE II, MATCHING CIRCUITS WILL BE DESIGNED AND FULLY MONOLITHICS OSCILLATORS FABRICATED AND EVALUATED DURING PHASE II.

* information listed above is at the time of submission.

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