GALAXY COMPOUND SEMICONDUCTORS, INC.

Basic Information

9922 E. Montgomery #7
Spokane, WA, 99206 4158

Company Profile

n/a

Additional Details

Field Value
DUNS: 103905100
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 12


  1. Novel Growth and Processing of an Extremely High Performance, Low Defect FPAs Utilizing HgCdTe on InSb Substrates

    Amount: $69,998.00

    HgCdTe based IR detectors are used in critical military thermal imaging systems and free-space communication. A key component for stealth defense is the megapixel IRFPAs used for fighter aircraft. A s ...

    SBIR Phase I 2010 Army Department of Defense
  2. Advanced Sensor Materials for Space

    Amount: $900,250.00

    Advanced technology and circuit architecture is under investigation for high performance, infra-red, and low power electronics. GaSb substrates have advantages that are attractive for implementation o ...

    SBIR Phase II 2007 Missile Defense Agency Department of Defense
  3. Indium Antimonide Substrate Growth for Affordable Large-Format Mid-Infrared (IR) Imagers

    Amount: $749,926.00

    A key component for stealth defense is the megapixel InSb based infrared focal plane arrays (IRFPAs) used for fighter aircraft support and protection. A significant aspect inhibiting widespread milita ...

    SBIR Phase II 2007 Air Force Department of Defense
  4. Advanced Sensor Materials for Space

    Amount: $99,946.00

    GaSb substrates have advantages that make them attractive for implementation of very long wavelength infrared (VLWIR) detectors with higher operating temperatures for stealth and space based applicati ...

    SBIR Phase I 2006 Missile Defense Agency Department of Defense
  5. Indium Antimonide Substrate Growth for Affordable Large-Format Mid-Infrared (IR) Imagers

    Amount: $99,876.00

    A key component for stealth defense is the megapixel InSb based infrared focal plane arrays used for fighter aircraft support and protection. A significant aspect inhibiting widespread military and co ...

    SBIR Phase I 2006 Air Force Department of Defense
  6. Non-Contact Final Polish/Passivation Technology for the Production of Epi-Ready InSb and GaSb Wafers

    Amount: $749,949.00

    Special technology and circuit architecture is under investigation for implementation of high performance, infra-red, and low power electronics technology. InSb and GaSb substrates have advantages tha ...

    SBIR Phase II 2004 Defense Advanced Research Projects Agency Department of Defense
  7. Materials and Processes for Bulk Antimony-based Substrate Materials

    Amount: $99,757.00

    GaSb substrates are attractive for higher temperature infrared detectors for space-based and stealth applications. However, substrate inconsistency inhibits their widespread commercial application. In ...

    SBIR Phase I 2004 Missile Defense Agency Department of Defense
  8. Non-Contact Final Polish/Passivation Technology for the Production of Epi-Ready GaSb Wafers

    Amount: $99,000.00

    "Special technology and circuit architecture is under investigation for implementation of low power electronics (LPE) that operate at low supply voltages without sacrificing performance. GaSb substrat ...

    SBIR Phase I 2002 Defense Advanced Research Projects Agency Department of Defense

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