GeneSiC Semiconductor Inc.

Company Information

Company Name
GeneSiC Semiconductor Inc.
Address
VA
Dulles, VA, 20166-2123
Phone
1 703-996-8200
URL
http://www.genesicsemi.com
DUNS
148969137
Number of Employees
13
Hubzone Owned:
N
Minority Owned:
Y
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$1,229,607.00
11
SBIR Phase II
$4,978,675.00
6
STTR Phase I
$350,000.00
3
STTR Phase II
$750,000.00
1
Chart code to be here

Award List

  1. High Voltage High Frequency SiC Switch

    Amount: $599,983.00

    The stringent power quality, size weight and volume requirements for operating next-generation intelligent power systems (NGIPS) require the development of revolutionary new semiconductor switch techn ...

    SBIR Phase II 2010 Department of Defense
  2. Stackable, Fast Plasma Spreading (FPS) SiC Thyristor Modules with Soldered Contacts

    Amount: $728,700.00

    The extremely challenging speed 10 kV) specifications of High Power Microwave (HPM), Railgun, and Electro-Magnetic Armor circuits require the development of revolutionary new semiconductor switch tech ...

    SBIR Phase II 2010 ArmyDepartment of Defense
  3. SiC Switch for Laser Power Modules

    Amount: $100,000.00

    The development of high performance power module based on fast, ultra high voltage (UHV) SiC switch is proposed. A number of innovative power device structures are introduced here for the first time. ...

    SBIR Phase I 2006 Office of the Secretary of DefenseDepartment of Defense
  4. SiC Semiconductor Switches for Klystron Modulators

    Amount: $99,956.00

    The severe voltage, speed, and size specifications of Klystron modulators in the International Linear Collider, a facility important to DOE high-energy-physics research, may neccessitate the developme ...

    SBIR Phase I 2006 Department of Energy
  5. Silicon Carbide Optically Gate Solid State Power Switch

    Amount: $100,000.00

    Traditional power semiconductor devices, such as those used in radio frequency acceleration structures for high energy physics research, have been extensively used as pulsed-power switches. For optic ...

    STTR Phase I 2007 Department of Energy
  6. Large Area SiC GTO Thyristor Development Widebandgap High Voltage High Frequency Switches

    Amount: $100,000.00

    Energy storage for utility applications requires the development of a high voltage, high current, high-frequency silicon-carbide-based switch. These applications demand pulse width modulation (PWM) c ...

    SBIR Phase I 2007 Department of Energy
  7. SiC Semiconductor Switches for Klystron Modulators

    Amount: $650,000.00

    The extremely challenging speed (>3 MHz) and voltage (>5 kV) specifications of Damping Ring (DR) Kicker Modulators for the planned International Linear Collider (ILC) require the development of revolu ...

    SBIR Phase II 2007 Department of Energy
  8. SiC Arrayed Detectors for Fast Neutron Detection

    Amount: $99,998.00

    Fast neutron radiography is targeted towards detection of explosives, contraband and for the screening of cargo. The energy discrimination of conventional neutron detection methods is poor and the pre ...

    SBIR Phase I 2007 Defense Threat Reduction AgencyDepartment of Defense
  9. CVD-based Polytype Controlled SiC Nanowire Growth

    Amount: $90,000.00

    A novel chemical vapor deposition (CVD) based step-flow epitaxy process is proposed for controllable growth of SiC nanowires with high polytype integrity. SiC nanowires will be grown in a modified com ...

    SBIR Phase I 2008 National Institute of Standards and TechnologyDepartment of Commerce
  10. SiC Switch for Laser Power Modules

    Amount: $750,000.00

    The stringent power quality, size weight and volume requirements for operating high power lasers require the development of revolutionary new semiconductor switch technology. The challenging specifica ...

    SBIR Phase II 2008 Office of the Secretary of DefenseDepartment of Defense

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