GeneSiC Semiconductor Inc.

Basic Information

VA
Dulles, VA, 20166-2123

http://www.genesicsemi.com

Company Profile

n/a

Additional Details

Field Value
DUNS: 148969137
Hubzone Owned: N
Socially and Economically Disadvantaged: Y
Woman Owned: N
Number of Employees: 13


  1. Monolithically Integrated Rad-Hard SiC Gate Driver for 1200 V DMOSFETs

    Amount: $125,000.00

    This two-phase SBIR program targets the need for highly integrated SiC-based electronics systems by developing analog and digital circuits that can be fully integrated with 4H-SiC power switching devi ...

    SBIR Phase I 2016 National Aeronautics and Space Administration
  2. All-Silicon Carbide power module based boost converter platform for grid-tied energy storage applications

    Amount: $150,000.00

    This project will create a new category of advanced all-Silicon Carbide power inverters for use in energy storage in the medium-voltage range and > 100 kW ratings. A design showing a significant in ...

    SBIR Phase I 2015 Department of Energy
  3. 900 V/200 A SiC Schottky Diode fabrication on 150 mm substrates in a high-volume Si foundry for automotive traction inverters

    Amount: $150,000.00

    Reducing the size, weight, and increasing the efficiency of electric vehicle traction power inverters requires the development of novel high-voltage, high current silicon carbide high-speed rectifiers ...

    SBIR Phase I 2015 Department of Energy
  4. Rad-hard 1200 V SiC MOSFETs and Schottky Rectifiers for a 30 kW PPU

    Amount: $125,000.00

    The proposed SBIR program targets the development of Rad-Hard by Design (RHBD), 1200 V-class SiC (planar) vertical DMOSFETs and power Schottky rectifiers for future NASA space missions. Single die rat ...

    SBIR Phase I 2015 National Aeronautics and Space Administration
  5. 300C/15 kW power converter with AlGaN/GaN-Si MOS-HFETs for electric propulsion systems

    Amount: $1,499,992.00

    Capitalizing on a strong expertise in III-Nitride epitaxy, GaN-Si power device designs, and wide-bandgap power electronics, researchers at GeneSiC Semiconductor propose a SBIR program focused on the d ...

    SBIR Phase II 2014 National Aeronautics and Space Administration
  6. Silicon Carbide Quasi-Bipolar Junction Transistor (QBJT)-Based boost converter platform for up-tower wind applications

    Amount: $150,000.00

    SiC power electronics are ideally suited for reducing the size and weight of power electronics systems that are used in wind power converters. Present power electronics systems require large transform ...

    SBIR Phase I 2013 Department of Energy
  7. 1200 V/50 A AlGaN-GaN-Si MOS-HFETs and Schottky Rectifiers

    Amount: $150,000.00

    DoEs recent emphasis on increasing fuel economy requires electrification of the vehicle powertrain, thus leading to extended range electric vehicles (EREVs), hybrid electric vehicles (HEVs), battery e ...

    STTR Phase I 2013 Department of Energy
  8. 500C/3.8 kW-class Resonant-Mode Power Converter featuring SiC Super Junction Transistors

    Amount: $199,766.00

    Capitalizing on a potent confluence of expertise in III-Nitride epitaxy, GaN-Si power device designs, and wide-bandgap power electronics, researchers at GeneSiC Semiconductor and Cornell University jo ...

    SBIR Phase I 2013 National Aeronautics and Space Administration
  9. 15 kV Phase Leg Modules with SiC Monolithically Integrated JBS Rectifier with Super Junction Transistor (MIDSJT) Devices

    Amount: $150,000.00

    This project will create a new category of advanced power modules for use in power electronics for energy storage in the medium-voltage range and & gt; 100 kW ratings. A design showing a significa ...

    SBIR Phase I 2012 Department of Energy
  10. Integrated SiC Super Junction Transistor-Diode Devices for High-Power Motor Control ModulesOoperating at 500 C

    Amount: $100,000.00

    Monolithic Integrated SiC Super Junction Transistor-JBS diode (MIDSJT) devices are used to construct 500<SUP>o</SUP>C capable motor control power modules for direct integration with the ex ...

    SBIR Phase I 2011 National Aeronautics and Space Administration

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