GENESIC SEMICONDUCTOR INC.

Company Information
Address 43670 TRADE CENTER PL STE 155
DULLES, VA, 20166-2123

http://www.genesicsemi.com

Information

DUNS: 148969137

# of Employees: 13


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: Y

Woman Owned: N



Award Charts




Award Listing

  1. Monolithically Integrated Rad-Hard SiC Gate Driver for 1200 V DMOSFETs

    Amount: $750,000.00

    This two-phase SBIR program targets the need for highly integrated SiC-based electronics systems by developing gate drive circuitry that can be fully integrated with 4H-SiC power switching devices, en ...

    SBIRPhase II2017National Aeronautics and Space Administration
  2. Automotive-qualified 900 V/250 A SiC DMOSFETs with integrated Schottky Rectifiers

    Amount: $150,000.00

    Reducing the size, weight, and increasing the efficiency of electric vehicle traction power inverters requires the development of novel high-voltage, high current Silicon Carbide high-speed switches a ...

    SBIRPhase I2017Department of Energy
  3. Robust SiC MOSFET based Power Modules

    Amount: $999,970.00

    Future all-electric warships demand improved electrical power density, conversion efficiency and system reliability. High Power converters are required for applications such as electromagnetic rail gu ...

    SBIRPhase II2017Department of Defense Navy
  4. Monolithically Integrated Rad-Hard SiC Gate Driver for 1200 V DMOSFETs

    Amount: $125,000.00

    This two-phase SBIR program targets the need for highly integrated SiC-based electronics systems by developing analog and digital circuits that can be fully integrated with 4H-SiC power switching devi ...

    SBIRPhase I2016National Aeronautics and Space Administration
  5. 900 V/200 A SiC Schottky Diode fabrication on 150 mm substrates

    Amount: $1,010,000.00

    Reducing the size, weight, and increasing the efficiency of automotive traction power inverters requires the development of novel high voltage, high current silicon carbide high speed rectifiers, sinc ...

    SBIRPhase II2016Department of Energy
  6. AllSiC power module based boost converter platform for gridtied energy storage applications

    Amount: $1,010,000.00

    This project will create a new category of advanced all Silicon Carbide power inverters for use in energy storage in the medium voltage range and > 100 kW ratings. A design showing a significant incre ...

    SBIRPhase II2016Department of Energy
  7. Robust SiC MOSFET based Power Modules

    Amount: $80,000.00

    This two-phase SBIR program will develop fully-qualified 6500 V/100 A SiC MOSFET based dual-half bridge power modules, targeted for insertion into the next-generation of U.S. NAVY all-electric warship ...

    SBIRPhase I2016Department of Defense Navy
  8. All-Silicon Carbide power module based boost converter platform for grid-tied energy storage applications

    Amount: $150,000.00

    This project will create a new category of advanced all-Silicon Carbide power inverters for use in energy storage in the medium-voltage range and > 100 kW ratings. A design showing a significant in ...

    SBIRPhase I2015Department of Energy
  9. 900 V/200 A SiC Schottky Diode fabrication on 150 mm substrates in a high-volume Si foundry for automotive traction inverters

    Amount: $150,000.00

    Reducing the size, weight, and increasing the efficiency of electric vehicle traction power inverters requires the development of novel high-voltage, high current silicon carbide high-speed rectifiers ...

    SBIRPhase I2015Department of Energy
  10. Rad-hard 1200 V SiC MOSFETs and Schottky Rectifiers for a 30 kW PPU

    Amount: $125,000.00

    The proposed SBIR program targets the development of Rad-Hard by Design (RHBD), 1200 V-class SiC (planar) vertical DMOSFETs and power Schottky rectifiers for future NASA space missions. Single die rat ...

    SBIRPhase I2015National Aeronautics and Space Administration

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