SiC Switch for Laser Power Modules

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00164-06-C-6015
Agency Tracking Number: O053-D03-4067
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2006
Solicitation Year: 2005
Solicitation Topic Code: OSD05-D03
Solicitation Number: 2005.3
Small Business Information
42652 Jolly Lane, South Riding, VA, 20152
DUNS: 148969137
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Ranbir Singh
 (571) 265-7535
Business Contact
 Ranbir Singh
Title: President
Phone: (571) 265-7535
Research Institution
The development of high performance power module based on fast, ultra high voltage (UHV) SiC switch is proposed. A number of innovative power device structures are introduced here for the first time. Using a comprehensive set of evaluation metrics, these devices will be benchmarked against more conventional power MOSFETs and IGBTs for application in a power supply of a high power laser. To give a wide range of breakdown voltage/switching speed trade-offs, diverse device structures include those relying on Thyristor-type, Bipolar Junction Transistor-type as well as JFET-type characteristics will be explored. Novel methods to use the proposed devices in PWM pulse forming networks are proposed. Relevant SiC fabrication experiments will be conducted to adapt commercial foundry to fabricate high performance SiC UHV devices. Extensive test and reliability plan will be developed for evaluating devices for high voltage pulse forming as well as trigger circuits. Power modules will be designed to have low parasitic inductance, high voltage stand-off capability and low thermal impedance. Finally, the most appropriate device will be fabricated and packaged in a power module optimized for >300 kW laser power supply during the Phase II of the program.

* information listed above is at the time of submission.

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