Silicon Carbide Optically Gate Solid State Power Switch

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-FG02-07ER86311
Agency Tracking Number: 82488
Amount: $100,000.00
Phase: Phase I
Program: STTR
Awards Year: 2007
Solicitation Year: 2007
Solicitation Topic Code: 32 a
Solicitation Number: DE-PS02-06ER06-30
Small Business Information
Genesic Semiconductor Inc.
25050 Riding Plaza, Suite 130-801, South Riding, VA, 20152
DUNS: 148969137
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Ranbir Singh
 Dr
 (571) 265-7535
 ranbir.singh@genesicsemi.com
Business Contact
 Ranbir Singh
Title: Dr
Phone: (571) 265-7535
Email: ranbir.singh@genesicsemi.com
Research Institution
 University of Illinois - Chicago
 Eric Gislason
 1737 West Polk Street
Chicago, IL, 60612 7227
 (312) 996-2862
 Nonprofit college or university
Abstract
Traditional power semiconductor devices, such as those used in radio frequency acceleration structures for high energy physics research, have been extensively used as pulsed-power switches. For optical switches, however, the key research problem is designing a suitable device structure that can address the multi-faceted performance demands. This project will design, fabricate, and characterize a high-gain, high-breakdown-voltage, high-temperature-sustainable, non-latched, conductivity-modulated, SiC-based vertical Optically-Gated High-power Solid-state Switch (SiC-OGHSS) for electromagnetic-interference (EMI) immune and optically-isolated pulsed-power applications. The SiC-OGHSS will: (1) be structurally more complex than traditional photoconductive pulsed-power switches; (2) support high current pulses (1 kA) at voltage level of 2 kV, with switching times less than 300 nsec; and (3) handle very high di/dt (40 kA/microsecond) at low duty cycle (< 0.1percent). Phase I will involve the SiC-OGHSS design, optimization, process-flow synthesis, fabrication, and experimental characterization of a 2 kV device under nominal and elevated temperature conditions. In Phase II, a 2nd-generation SiC-OGHSS multichip module will be designed to scale up the power-handling capability, by enhancing breakdown voltage (6 kV), pulse current (> 2 kA), and the device gain. Commercial Applications and other Benefits as described by the awardee: The SiC-OGHSS technology should lead to a new product line in power components, and a number of large aerospace companies already have expressed interest. The worldwide market revenue for discrete power devices is predicted to be over 16 billion dollars, with a market growth rate that has averaged a very robust 15 percent per year since 2001.

* information listed above is at the time of submission.

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