CVD-based Polytype Controlled SiC Nanowire Growth

Award Information
Agency:
Department of Commerce
Amount:
$90,000.00
Program:
SBIR
Contract:
SB1341-08-SE-0671
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
National Institute of Standards and Technology
Award Year:
2008
Phase:
Phase I
Agency Tracking Number:
510-08
Solicitation Topic Code:
N/A
Small Business Information
GeneSiC Semiconductor, Inc.
43670 Trade Center Place, Suite 155, Dulles, VA, 20166
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Siddarth Sundaresan
 (703) 996-8200
 sid@genesicsemi.com
Business Contact
Phone: () -
Research Institution
N/A
Abstract
A novel chemical vapor deposition (CVD) based step-flow epitaxy process is proposed for controllable growth of SiC nanowires with high polytype integrity. SiC nanowires will be grown in a modified commercial high-temperature CVD reactor, used by industry for growing high-quality SiC epitaxial thin films. Different polytypes of SiC nanowires will be grown by choosing appropriate substrate materials as well as tuning the Si/C molar ratio in the precursor species. The nanowires will be grown on off-oriented substrates, in an attempt to ensure polytype purity. Various techniques for controlling the diameter, orientation and doping type / concentration of the SiC nanowires will be explored. Several strategies for patterning the nanowires on specific locations on the substrates will be investigated. Finally, a prototype gas sensor device will be constructed using the SiC nanowires grown in this project. This gas sensor will allow the detection of greenhouse gasses like Nitrous Oxide and CO2 with extremely high sensitivity.

* information listed above is at the time of submission.

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