Stackable, Fast Plasma Spreading (FPS) SiC Thyristor Modules with Soldered Contacts

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$119,937.00
Award Year:
2008
Program:
SBIR
Phase:
Phase I
Contract:
W15QKN-09-C-0033
Agency Tracking Number:
A082-043-1706
Solicitation Year:
2008
Solicitation Topic Code:
A08-043
Solicitation Number:
2008.2
Small Business Information
GENESIC SEMICONDUCTOR, INC.
43670 Trade Center Place, Suite 155, Dulles, VA, 20166
Hubzone Owned:
N
Socially and Economically Disadvantaged:
Y
Woman Owned:
N
Duns:
148969137
Principal Investigator:
Ranbir Singh
President
(703) 996-8200
ranbir.singh@genesicsemi.com
Business Contact:
Ranbir Singh
President
(703) 996-8200
ranbir.singh@genesicsemi.com
Research Institution:
n/a
Abstract
The development of a novel high performance power module based on fast, ultra high voltage Thyristor-based SiC switch is proposed. Innovations proposed include: (a) development of a new type of Silicon Carbide Thyristor structure optimized for high pulsed currents; (b) Wire bond-less packages with extremely low parasitic inductance; (c) methods of series-parallel connection of large number of >15kV modules, that are relevant towards pulsed power and electric utility applications. Novel methods to use the proposed devices in pulse modulators are proposed. Relevant SiC fabrication experiments will be conducted in a semiconductor foundry to fabricate ultra high voltage SiC devices. Extensive test and reliability plan will be developed for evaluating devices for high pulse currents as well as trigger circuits. Power modules will be designed to have low parasitic inductance, high voltage stand-off capability and low thermal impedance. Finally, optimized bipolar devices will be fabricated and packaged in a power module optimized for a scalable design that can achieve up to 140 kV, 50 kA pulsed capability.

* information listed above is at the time of submission.

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