GPD Optoelectronics Corporation

Address

7 Manor Parkway
Salem, NH, 03079 2842

Information

DUNS: 66616442
# of Employees: 33

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N

Award Charts




Award Listing

  1. Motor Controller for Extreme Environments Based on SiGe

    Amount: $99,931.00

    The proposed innovation is a motor-control subsystem capable of operation in extreme environments, including those to be encountered on the Moon and Mars. Specifically, we will demonstrate operation o ...

    SBIRPhase I2009National Aeronautics and Space Administration
  2. GaAs JFETs for Extremely Low-Noise, Deep Cryogenic Sensor Readout

    Amount: $100,000.00

    Ultrasensitive sensors used in NASAs scientific missions (for example infrared sensors) typically require operation at deep cryogenic temperatures for optimum performance. However, to make full use of ...

    SBIRPhase I2008National Aeronautics and Space Administration
  3. Novel SiGe Devices for Cryogenic Power Electronics

    Amount: $747,576.00

    Power generation, power distribution and electric propulsion on ships and aerospace vehicles could be made smaller, lighter, more efficient, more versatile, and lower maintenance by operating these sy ...

    STTRPhase II2005Defense Advanced Research Projects Agency Department of Defense
  4. SiGe Semiconductor Devices for High-Performance Cryogenic Power Electronics

    Amount: $600,000.00

    We propose to continue development of power semiconductor devices (diodes and transistors) for power-management and actuator-control circuits operating at cryogenic temperatures. Cryogenic power elect ...

    SBIRPhase II2004National Aeronautics and Space Administration
  5. Novel SiGe Devices for Cryogenic Power Electronics

    Amount: $98,970.00

    It is predicted that systems for power generation, power distribution and electric propulsion on ships and aerospace vehicles could be made smaller, lighter, more efficient, more versatile, and lower ...

    STTRPhase I2004Defense Advanced Research Projects Agency Department of Defense
  6. SiGe Semiconductor Devices for High-Performance Cryogenic Power Electronics

    Amount: $70,000.00

    We propose to develop power semiconductor devices (diodes and transistors) for power-management and actuator-control circuits operating at cryogenic temperatures. Cryogenic power electronics can provi ...

    SBIRPhase I2003National Aeronautics and Space Administration
  7. Ge Semiconductor Devices for High-Performance Cryogenic Power Electronics

    Amount: $0.00

    The proposed innovation is germanium power semiconductor devices (diodes and transistors) developed specifically for power-management and actuator-control circuits operating at low and cryogenic tempe ...

    SBIRPhase I2002National Aeronautics and Space Administration
  8. Ge Semiconductor Devices for High-Performance Cryogenic Power Electronics

    Amount: $600,000.00

    The proposed innovation is germanium power semiconductor devices (diodes and transistors) developed specifically for power-management and actuator-control circuits operating at low and cryogenic tempe ...

    SBIRPhase II2002National Aeronautics and Space Administration
  9. Ge Semiconductor Devices for High-Performance Cryogenic Power Electronics

    Amount: $70,000.00

    The proposed innovation is germanium power semiconductor devices (diodes and transistors) developed specifically for power-management and actuator-control circuits operating at low and cryogenic tempe ...

    SBIRPhase I2001National Aeronautics and Space Administration

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