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Novel SiGe Devices for Cryogenic Power Electronics

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-05-C-0307
Agency Tracking Number: 04ST1-0007
Amount: $747,576.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: ST041-002
Solicitation Number: N/A
Timeline
Solicitation Year: 2004
Award Year: 2005
Award Start Date (Proposal Award Date): 2005-09-30
Award End Date (Contract End Date): 2007-12-30
Small Business Information
7 Manor Parkway, Salem, NH, 03079
DUNS: 066616442
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Rufus Ward
 VP Engineering
 (603) 894-6865
 rrward@gpd-ir.com
Business Contact
 Oliver Ward
Title: President
Phone: (603) 894-6865
Email: ooward@gpd-ir.com
Research Institution
 AUBURN UNIV.
 Gene Taylor
 310 Samford Hall
Auburn University, AL, 36849
 (334) 844-4438
 Nonprofit college or university
Abstract
Power generation, power distribution and electric propulsion on ships and aerospace vehicles could be made smaller, lighter, more efficient, more versatile, and lower maintenance by operating these systems—partly or entirely—at cryogenic temperatures. Our goal is to demonstrate the advantages of cryogenic operation in regard to electronic components, specifically semiconductor devices (power diodes and transistors) based on the silicon-germanium (SiGe) materials system. Our choice of SiGe is based on: first, its versatility in device design through bandgap engineering and selective placement, which enables optimizing device performance at cryogenic temperatures; and, second, its high compatibility with standard semiconductor fabrication. Our technical approach comprises four parts: (1) device simulation, (2) device fabrication and characterization, (3) evaluation of the devices in power circuits, (4) iteration of this simulation-fabrication-characterization-evaluation cycle. Our technical goal for Phase II is to further develop SiGe heterojunction diodes into a mature product for insertion into cryogenic power-management subsystems, such as those being developed at MTECH Laboratories. Target requirements are 10-100 A, 1000-1500 V diodes operating temperatures down to ~60 K and having performance superior to available state-of-the-art Si diodes.

* Information listed above is at the time of submission. *

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