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Growth of AlN Crystals

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N00014-03-C-0157
Agency Tracking Number: 01-0025T
Amount: $599,997.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
5300 Mandrake Ct.
Raleigh, NC 27613
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dr Scott Wolter
 Project Manager
 (919) 515-7083
Business Contact
 Dr.Raoul Schlesser
Title: VP R&D
Phone: (919) 515-6178
Research Institution
 North Carolina State University
 Zlatko Sitar
1001 Capability Dr, RB#1, Rm220, Box7919
Raleigh, NC 27695
United States

 Nonprofit College or University

"The objective of this proposal is the fabrication of AlN substrates with single crystalline quality meeting or exceeding the standards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure, and asteep temperature gradient, yields high-purity AlN single crystals at commercially interesting growth rates by sublimation of AlN in a nitrogen atmosphere. Through the proposed research, HexaTech, Inc. plans to increase the size of AlN bulk crystals,targeting the demonstration of 2" boule diameter, without compromising the crystal quality. Wafering and polishing will be performed at NCSU. The properties of grown crystals will be evaluated at NCSU and will include (1) microstructural analyses (opticaland scanning electron microscopies, x-ray diffraction, Raman spectroscopy), (2) chemical analysis (X-ray photoelectron spectroscopy), (3) identification of impurities (secondary ion mass spectroscopy, optical techniques), and (4) study of electricalproperties (I-V, Hall measurements). AlN wafers will find an immediate application as lattice-matched substrates for high-quality epitaxy of III-nitrides and will enable the fabrication of superior quality AlGaN electronic and optoelectronic devices,including high-frequency amplifiers and switches, blue and UV solid state lasers, solar-blind UV detectors, and surface acoustic wave (SAW) devices. Since the epitaxial processes and a variety of III-nitride device structures have been developed during thepast ten years on less favorable substrates with large lattice mismatch, the penetration of these new AlN wafers into the market place can occur without delay and to the immediate benefit of device performance."

* Information listed above is at the time of submission. *

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