You are here

Growth of GaN single crystals (BMD002-014A)

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N0001402M1056
Agency Tracking Number: 02-0611
Amount: $69,976.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2003
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
5300 Mandrake Ct.
Raleigh, NC 27613
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Scott Wolter
 Senior Research Scientist
 (919) 515-8637
Business Contact
 Zlatko Sitar
Title: President
Phone: (919) 515-8637
Research Institution

Through the proposed research, we plan to demonstrate the feasibility of the ammonothermal growth method for commercial production of high quality GaN crystals. This will be achieved by fabrication of a classical autoclave especially designed for thisprocess, demonstration of adequate solubility, and demonstration of transport and re-deposition of the material on GaN seeds. The ammonothermal crystal growth method is modeled after the very successful process of synthesizing a-quartz in supercriticalwater. Laboratory scale studies of GaN dissolution and transport in supercritical ammonia in presence of azides yielded comparable results to those in the quartz process.The availability of GaN crystals and wafers will enable epitaxial, lattice-matched growth of III-nitride device structures with orders of magnitude reduced dislocation densities in the active layers. The development of GaN substrate technology will directly lead to the fabrication of high power and high frequency electronic devices, and short wavelength optoelectronic devices. The development of a lattice-matched nitride substrate with low dislocationdensity will be beneficial to the entire nitride community and will ultimately lead to the fabrication of nitride-based, electronic and optoelectronic devices with improved device performance and lifetime. Since a variety of III-nitride device structureshave been developed during the past ten years on less favorable substrates with large lattice mismatch, the penetration of high-quality GaN wafers into the market place can occur without delay and to the immediate benefit to device performance.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government