MULTILAYER QUANTUM WELL LAYER FILM THERMOELECTRICS

Award Information

Agency: Department of Energy

Branch: N/A

Contract: N/A

Agency Tracking Number: 21124

Amount: $600,000.00

Phase: Phase II

Program: SBIR

Solicitation Topic Code: N/A

Solicitation Number: N/A

Timeline

Solicitation Year: N/A

Award Year: 1994

Award Start Date (Proposal Award Date): N/A

Award End Date (Contract End Date): N/A

Small Business Information

HI-Z TECHNOLOGY, INC.

6373 Nancy Ridge Dr

San Diego, CA 92121

United States

DUNS: N/A

HUBZone Owned: No

Woman Owned: No

Socially and Economically Disadvantaged: No

Principal Investigator

Name: Mr Norbert B Elsner
Phone: (619) 535-9343

Business Contact

Phone: () -

Research Institution

N/A

Abstract

THERMOELECTRIC MATERIALS ARE USED IN A VARIETY OF POWER SOURCES AND PELTIER REFRIGERATORS. THEDIMENSIONLESS FIGURE-OF-MERIT (ZT) IS USED AS A MEASURE OF THE RELATIVE EFFECTIVENESS OF THESE MATERIALS. THE BEST KNOWN MATERIALS HAVE ZTS OF LESS THAN ONE. NEW SOLID STATE THEORY PREDICTS THAT MULTILAYER-QUANTUM WELL FILMS COULD HAVE ZTS GREATER THAN SIX. IN PHASE I SUCH MATERIALS WILL BE PRODUCED BY ALTERNATELY DEPOSITING A QUANTUM WELL LAYER OF A THERMOELECTRIC MATERIAL AND A SUITABLE BARRIER LAYER. EVALUATION OF THESE MATERIALS WILL CONSIST OF MEASUREMENT OF SEEBECK COEFFICIENT, RESISTIVITY, AND THERMAL CONDUCTIVITY, AS WELL AS A DIRECT MEASUREMENT OF Z. TRANSMISSILN ELECTRON MICROSCOPY WILL BE USED TO EVALUATE THE OTHER MATERIALCHARACTERISTCS.

* Information listed above is at the time of submission. *

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MULTILAYER QUANTUM WELL LAYER FILM THERMOELECTRICS