MULTILAYER QUANTUM WELL LAYER FILM THERMOELECTRICS

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$600,000.00
Award Year:
1994
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
21124
Agency Tracking Number:
21124
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Hi-z Techonology Inc. (Currently HI-Z TECHNOLOGY, INC.)
6373 Nancy Ridge Dr, San Diego, CA, 92121
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Mr Norbert B Elsner
(619) 535-9343
Business Contact:
() -
Research Institution:
n/a
Abstract
THERMOELECTRIC MATERIALS ARE USED IN A VARIETY OF POWER SOURCES AND PELTIER REFRIGERATORS. THEDIMENSIONLESS FIGURE-OF-MERIT (ZT) IS USED AS A MEASURE OF THE RELATIVE EFFECTIVENESS OF THESE MATERIALS. THE BEST KNOWN MATERIALS HAVE ZTS OF LESS THAN ONE. NEW SOLID STATE THEORY PREDICTS THAT MULTILAYER-QUANTUM WELL FILMS COULD HAVE ZTS GREATER THAN SIX. IN PHASE I SUCH MATERIALS WILL BE PRODUCED BY ALTERNATELY DEPOSITING A QUANTUM WELL LAYER OF A THERMOELECTRIC MATERIAL AND A SUITABLE BARRIER LAYER. EVALUATION OF THESE MATERIALS WILL CONSIST OF MEASUREMENT OF SEEBECK COEFFICIENT, RESISTIVITY, AND THERMAL CONDUCTIVITY, AS WELL AS A DIRECT MEASUREMENT OF Z. TRANSMISSILN ELECTRON MICROSCOPY WILL BE USED TO EVALUATE THE OTHER MATERIALCHARACTERISTCS.

* information listed above is at the time of submission.

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