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Device Level Thermal Management Solutions for Phased Array Rada

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-08-C-0110
Agency Tracking Number: B073-034-0273
Amount: $99,843.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: MDA07-034
Solicitation Number: 2007.3
Solicitation Year: 2007
Award Year: 2008
Award Start Date (Proposal Award Date): 2008-02-14
Award End Date (Contract End Date): 2008-08-14
Small Business Information
20 Alpha Road
Chelmsford, MA 01824
United States
DUNS: 131669293
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Martin Theobald
 Consulting Engineer
 (719) 590-1112
Business Contact
 William Hannabach
Title: Director of Programs
Phone: (978) 250-3343
Research Institution

It is the intent of Hittite through this proposal to explore the feasibility of using chemical vapor deposition (CVD)-diamond as a passivating layer within the junction of a Gallium Nitride (GaN) microwave transistor. CVD-diamond being a material with very high thermal conductivity, and being located as close as possible to the heat dissipation source, will have the effect of reducing junction temperature creating a potential for increased radio frequency (RF) output power from the GaN device. The deposition will be constrained to an area over the transistor drain and source metallization as opposed to an entire wafer, thereby reducing fabricated wafer bow.

* Information listed above is at the time of submission. *

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