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Carbon Nanotube FET Modeling and RF circuits

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8750-19-C-0074
Agency Tracking Number: F18B-006-0141
Amount: $149,999.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: AF18B-T006
Solicitation Number: 18.B
Timeline
Solicitation Year: 2018
Award Year: 2019
Award Start Date (Proposal Award Date): 2019-02-06
Award End Date (Contract End Date): 2019-02-06
Small Business Information
205 Portland St 4th Floor
Boston, MA 02114
United States
DUNS: 111487588
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Seth S Kessler
 President/CEO
 (617) 447-2172
 skessler@metisdesign.com
Business Contact
 Seth Kessler
Phone: (617) 447-2172
Email: skessler@metisdesign.com
Research Institution
 Massachusettes Institute of Technology
 Max Shulaker, Ph.D. Max Shulaker, Ph.D.
 
77 Massachusettes Av
Cambridge, MA 02139
United States

 (617) 324-2730
 Nonprofit College or University
Abstract

The computing demands of future data-intensive applications far exceed the capabilities of today’s electronics and cannot be met by isolated improvements in transistor technologies or integrated circuit (IC) architectures alone. Carbon Nanotube Field-Effect Transistors (CNFET) technology has emerged as leading candidate for energy-efficient and high-performance digital systems. Unfortunately, substantial imperfections and variations inherent to carbon nanotubes (CNTs), combined with low current densities, restricted demonstrations to stand-alone transistors or logic gates, with severely limited performance, yield, and scalability. The motivations for the proposed effort is to establish a model based on the structural conditions of CNFET, i.e, current density, CNT density and alignment etc. MDC plan to work closely with Research Institute (RI) MIT to investigate CNFET device design and its impact on high-frequency (10-40 GHz) circuit performance in comparison to Si-MOSFETs and related circuits at the same channel lengths. The model will aim to design CNFET with performance comparable and out performing Si-MOSFETs. MDC will translate these models into a unified robust software user interface.

* Information listed above is at the time of submission. *

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