Ii-vi Inc.

Address

375 Saxonburg Blvd
Saxonburg, PA, 16056

Information

DUNS:
# of Employees: 24

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N

Award Charts




Award Listing

  1. INTELLIGENT CONTROL OF BRIDGMAN CDZNTE CRYSTAL GROWTH

    Amount: $275,504.00

    LARGE, HIGH QUALITY CDZNTE SINGLE CRYSTALS AREREQUIRED AS HGCDTE EPITAXIAL SUBSTRATES IN THE MANUFACTURE OF INFRARED FOCAL PLANE ARRAYS. BRIDGMAN GROWTH PROCESSES ARE CURRENTLY EMPLOYED TO PRODUCE MAT ...

    SBIRPhase II1993Defense Advanced Research Projects Agency Department of Defense
  2. GROWTH OF BULK II-VI CRYSTALS FOR VISIBLE LIGHT EMITTERS

    Amount: $50,000.00

    HIGH QUALITY ZINC TELLURIDE (ZNTE) AND ZINC SELENIDE (ZNSE) SUBSTRATES ARE REQUIRED FOR THE CURRENT DEVELOPMENT OF BLUE AND GREEN LIGHT EMITTING DEVICES FABRICATED BY MOLECULAR BEAM EPITAXY (MBE) AND ...

    SBIRPhase I1992Defense Advanced Research Projects Agency Department of Defense
  3. INTELLIGENT CONTROL OF BRIDGMAN CDZNTE CRYSTAL GROWTH

    Amount: $50,000.00

    N/A

    SBIRPhase I1991Defense Advanced Research Projects Agency Department of Defense
  4. THE IMPACT AND REDUCTION OF CDZNTE SUBSTRATE DEFECTS ON OMVPE HGCDTE EPILAYER PERFORMANCE

    Amount: $500,000.00

    DEFECTS IN THE CDTE FAMILY OF SUBSTRATES ARE OF CRITICAL IMPORTANCE WHEN GROWING EXPITAXIAL FILMS OF HGCDTE BY LPE, OMVPE OR MBE. PRECIPITATES, DISLOCATIONS, AND SUBGRAIN STRUCTURE IN SUBSTRATES DEGRA ...

    SBIRPhase II1990Army Department of Defense
  5. DEVELOPMENT OF CD(1-X)MN(X)TE AS A LATTICE MATCHED SUBSTRATE FOR EPITAXY OF HG(1-X)CD(X)TE

    Amount: $250,000.00

    THE GROWTH OF HG(1-X)CD(X)TE LAYERS BY MOLECULAR BEAM EPITAXY (MBE) AND INNOVATIVE IN-SITU WAFER PREPRATION PRIOR TO GROWTH ARE KEY ISSUES IN DEVELOPING SECOND GENERATION HIGH PERFORMANCE IR DETECTORS ...

    SBIRPhase II1989Army Department of Defense
  6. IMPROVED GROWTH OF CRYSTALS FOR INFRARED DETECTORS

    Amount: $50,000.00

    CDTESE HAS RECENTLY BEEN SHOWN TO HAVE EPD (ETCH PIT DENSITY) LEVELS IN THE MID-10(4)/CM(2) RANGE, AND DUE TO THEDISTRIBUTION COEFFICIENT OF SE (1.03) IN CDTE, LARGE CRYSTALS WITH UNIFORM COMPOSITIONS ...

    SBIRPhase I1988National Science Foundation
  7. THE IMPACT AND REDUCTION OF CDZNTE SUBSTRATE DEFECTS ON OMVPE HGCDTE EPILAYER PERFORMANCE

    Amount: $62,974.00

    N/A

    SBIRPhase I1988Army Department of Defense
  8. DEVELOPMENT OF CD(1-X)MN(X)TE AS A LATTICE MATCHED SUBSTRATE FOR EPITAXY OF HG(1-X)CD(X)TE

    Amount: $74,999.00

    N/A

    SBIRPhase I1987Army Department of Defense
  9. FINITE ELEMENT THERMODYNAMIC MODEL OF MULTI-ZONE CDTE VERTICAL BRIDGMAN GROWTH LEADING TO IMPROVED YIELDS OF ELECTROOPTIC MODULATOR

    Amount: $500,000.00

    CDTE ELECTROOPTC MODULATOR CYSTALS UP TO10X10X50MM3 WILL BE THE DEVICE OF CHOICE IN MANY CO2 LASER RADAR SYSTEMS UNDER DEVELOPMENT BY AFAL. THE OBJECTIVES OF THIS WORK IS TO SIGNIFICANTLY RAISE CURREN ...

    SBIRPhase II1985Air Force Department of Defense
  10. DEPOSITION OF LOW DEFECT DENSITY OPTICAL COATINGS

    Amount: $500,000.00

    THIS IS A PROPOSAL TO THE NAVAL WEAPONS CENTER FOR PREPARING LOW DEFECT DENSITY OPTICAL COATINGS (FEWER THAN 100/CM2, 1 - 10 UM IN SIZE). II-VI INCORPORATED WILL CONSTRUCT A BENT ION-PLATING COATING A ...

    SBIRPhase II1985Navy Department of Defense

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