Ii-vi Inc.

Company Information

Company Name
Ii-vi Inc.
Address
375 Saxonburg Blvd
Saxonburg, PA, 16056
Phone
n/a
URL
n/a
DUNS
n/a
Number of Employees
24

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$492,910.00
8
SBIR Phase II
$2,025,504.00
5
Chart code to be here

Award List

  1. FINITE ELEMENT THERMODYNAMIC MODEL OF MULTI-ZONE CDTE VERTICAL BRIDGMAN GROWTH LEADING TO IMPROVED YIELDS OF ELECTROOPTIC MODULATOR

    Amount: $500,000.00

    CDTE ELECTROOPTC MODULATOR CYSTALS UP TO10X10X50MM3 WILL BE THE DEVICE OF CHOICE IN MANY CO2 LASER RADAR SYSTEMS UNDER DEVELOPMENT BY AFAL. THE OBJECTIVES OF THIS WORK IS TO SIGNIFICANTLY RAISE CURREN ...

    SBIR Phase II 1985 Air ForceDepartment of Defense
  2. DEPOSITION OF LOW DEFECT DENSITY OPTICAL COATINGS

    Amount: $500,000.00

    THIS IS A PROPOSAL TO THE NAVAL WEAPONS CENTER FOR PREPARING LOW DEFECT DENSITY OPTICAL COATINGS (FEWER THAN 100/CM2, 1 - 10 UM IN SIZE). II-VI INCORPORATED WILL CONSTRUCT A BENT ION-PLATING COATING A ...

    SBIR Phase II 1985 NavyDepartment of Defense
  3. RESOLUTION ELECTRON MICROSCOPY) MICROANALYSIS- INNOVATIVE METHODS

    Amount: $80,000.00

    THIN LAYER SEMICONDUCTING DEVICES HAVE LARGE POTENTIAL IN BOTH DEFENSE AND COMMERICAL APPLICATIONS. STRUCTURES BUILT IN THE HGCDTE/ CDTE, ALGAAS AND INGAASP/INP SYSTEMS ARE IN NEED OF INTENSIVE MATERI ...

    SBIR Phase I 1985 Air ForceDepartment of Defense
  4. DEVELOPMENT OF CD(1-X)MN(X)TE AS A LATTICE MATCHED SUBSTRATE FOR EPITAXY OF HG(1-X)CD(X)TE

    Amount: $250,000.00

    THE GROWTH OF HG(1-X)CD(X)TE LAYERS BY MOLECULAR BEAM EPITAXY (MBE) AND INNOVATIVE IN-SITU WAFER PREPRATION PRIOR TO GROWTH ARE KEY ISSUES IN DEVELOPING SECOND GENERATION HIGH PERFORMANCE IR DETECTORS ...

    SBIR Phase II 1989 ArmyDepartment of Defense
  5. IMPROVED GROWTH OF CRYSTALS FOR INFRARED DETECTORS

    Amount: $50,000.00

    CDTESE HAS RECENTLY BEEN SHOWN TO HAVE EPD (ETCH PIT DENSITY) LEVELS IN THE MID-10(4)/CM(2) RANGE, AND DUE TO THEDISTRIBUTION COEFFICIENT OF SE (1.03) IN CDTE, LARGE CRYSTALS WITH UNIFORM COMPOSITIONS ...

    SBIR Phase I 1988 National Science Foundation
  6. THE IMPACT AND REDUCTION OF CDZNTE SUBSTRATE DEFECTS ON OMVPE HGCDTE EPILAYER PERFORMANCE

    Amount: $500,000.00

    DEFECTS IN THE CDTE FAMILY OF SUBSTRATES ARE OF CRITICAL IMPORTANCE WHEN GROWING EXPITAXIAL FILMS OF HGCDTE BY LPE, OMVPE OR MBE. PRECIPITATES, DISLOCATIONS, AND SUBGRAIN STRUCTURE IN SUBSTRATES DEGRA ...

    SBIR Phase II 1990 ArmyDepartment of Defense
  7. INTELLIGENT CONTROL OF BRIDGMAN CDZNTE CRYSTAL GROWTH

    Amount: $275,504.00

    LARGE, HIGH QUALITY CDZNTE SINGLE CRYSTALS AREREQUIRED AS HGCDTE EPITAXIAL SUBSTRATES IN THE MANUFACTURE OF INFRARED FOCAL PLANE ARRAYS. BRIDGMAN GROWTH PROCESSES ARE CURRENTLY EMPLOYED TO PRODUCE MAT ...

    SBIR Phase II 1993 Defense Advanced Research Projects AgencyDepartment of Defense
  8. GROWTH OF BULK II-VI CRYSTALS FOR VISIBLE LIGHT EMITTERS

    Amount: $50,000.00

    HIGH QUALITY ZINC TELLURIDE (ZNTE) AND ZINC SELENIDE (ZNSE) SUBSTRATES ARE REQUIRED FOR THE CURRENT DEVELOPMENT OF BLUE AND GREEN LIGHT EMITTING DEVICES FABRICATED BY MOLECULAR BEAM EPITAXY (MBE) AND ...

    SBIR Phase I 1992 Defense Advanced Research Projects AgencyDepartment of Defense
  9. FINITE ELEMENT THERMODYNAMIC MODEL OF MULTI-ZONE CDTE VERTICAL BRIDGMAN GROWTH LEADING TO IMPROVED YIELDS OF ELECTROOPTIC MODULATOR

    Amount: $75,000.00

    N/A

    SBIR Phase I 1984 Air ForceDepartment of Defense
  10. THE IMPACT AND REDUCTION OF CDZNTE SUBSTRATE DEFECTS ON OMVPE HGCDTE EPILAYER PERFORMANCE

    Amount: $62,974.00

    N/A

    SBIR Phase I 1988 ArmyDepartment of Defense

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