DEVELOPMENT OF CD(1-X)MN(X)TE AS A LATTICE MATCHED SUBSTRATE FOR EPITAXY OF HG(1-X)CD(X)TE

Award Information
Agency:
Department of Defense
Amount:
$250,000.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Army
Award Year:
1989
Phase:
Phase II
Agency Tracking Number:
5963
Solicitation Topic Code:
N/A
Small Business Information
Ii-vi Inc.
Saxonburg Blvd, Saxonburg, PA, 16056
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Kai-yung Lay
 (412) 352-4455
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THE GROWTH OF HG(1-X)CD(X)TE LAYERS BY MOLECULAR BEAM EPITAXY (MBE) AND INNOVATIVE IN-SITU WAFER PREPRATION PRIOR TO GROWTH ARE KEY ISSUES IN DEVELOPING SECOND GENERATION HIGH PERFORMANCE IR DETECTORS. THE OBJECTIVE OF THIS WORK IS TO ESTABLISH THE GROWTH OF CD(1-X)MN(X)TE CRYSTALS THAT CAN SERVE AS SUBSTRATES FOR THE GROWTH OF LATTICE-MATCHED HG(1-X)CD(X)TE LAYERS. PHASE I WILL INCLUDE: (1) SCALEUP OF CRYSTAL GROWTH TECHNOLOGY TO PRODUCE LARGE HIGH QUALITY SUBSTRATES, (2) ASSESSMENT OF WAFER AND SURFACE PROCESSING, (3) DEVELOPMENT OF INGOT CHARACTERIZATION AND (4) DEVELOPMENT OF SPUTTERCLEANING AND ANNEALING KINETICS UTILIZING X-RAY PHOTOEMISSION SPECTROSCOPY (XPS) AND PHOTOREFLECTANCE (PR) SPECTROSCOPY. PHASE II IS ENVISIONED TO INCLUDE: (1) PURIFICATION OF SOURCE MATERIALS, (2) DEVELOPMENT OF ADVANCED GROWTH TECHNOLOGY TO IMPROVE THE CRYSTAL QUALITY, (3) DEVELOPMENT OF ADVANCED CHARACTERIZATION TECHNOLOGY, (4) DEVELOPMENT OF IN-SITU FINAL WAFER PREPARATION AND GROWTH IN AN MBE SYSTEM.

* information listed above is at the time of submission.

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