NOVEL ALL-DRY ORGANIC LITHOGRAPHIC RESIST

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 721
Amount: $190,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1986
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Ionomet Corp.
P.o. Box 222, Lincoln Ctr., MA, 01773
Duns: N/A
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr. Gershon M. Goldberg
 () -
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THE FEASIBILITY OF AN ALL-DRY LITHOGRAPHIC SYSTEM BASED ON THE SISLSESQUIOXANES IS EXAMINED. THESE ARE A CLASS OF 3-DIMENSIONAL ORGANOSILICON POLYMERS THAT CAN BE VACUUM DEPOSITED ON SILICON, EXPOSED BY E-BEAMS, X-RAYS, OR UV LIGHT AND DEVELOPED TO A FINE LINE RELIEF IMAGE SIMPLY BY HEATING. THE RESIST PATTERN WITHSTANDS OXYGEN PLASMA OR RIE ETECH CONDITIONS. THE ACHIEVMENT OF A SUITABLE ALL-DRY SYSTEM WILL ELIMINATE MANY SHORTCOMINGS OF SPIN-DEPOSITED RESISTS LEADING TO A SIMPLER SAFER, AND LESS WASTE-G GENERATING PROCESS FOR IC MANUFACTURE. THE PROGRAM OBJECTIVES ARE: 1. TO IDENTIFY SUBSITUTED STRUCTURES OF HIGH SENSITIVITY AND DETERMINE THEIR LITHOGRAPHIC PROPETIES.THE COMPOUNDS WILL BE PREPARED FOR HYDROLOSIS OF ORGANOTRIHALOSILANES (OR CO-HYDROLYSIS OF MIXTURES OF ORGANOTRIHALOSILANES), SUBSEQUENT DEHYDRATION, AND ISOLATIONOF THE SILSESQUIOXANE POLYMER BY SUBLIMATION OR CRYSTALLIZATION. 2. TO DETERMINE VACUUM DEPOSITION PARAMETERS. THE IMPLICATIONS OF THIS RESEARCH ARE FAR REACHING IN SIMPLIFYING RESIST COATING AND WAFER HANDLING TECHNIQUES AS DIMENSIONS BECOME SMALLER AND WAFER FORMATS BECOME LARGER.

* information listed above is at the time of submission.

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