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Open Call for Innovative Defense-Related Dual-Purpose Technologies/Solutions

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8751-19-C-A039
Agency Tracking Number: F182-005-1652
Amount: $745,672.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: AF182-005
Solicitation Number: 18.2
Timeline
Solicitation Year: 2018
Award Year: 2019
Award Start Date (Proposal Award Date): 2019-03-06
Award End Date (Contract End Date): 2021-03-06
Small Business Information
2900 South Main Street
Salt Lake City, UT 84115
United States
DUNS: 013017947
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: Yes
Principal Investigator
 Jennifer Hwu
 CEO/President
 (801) 694-7387
 hwu@innosystech.com
Business Contact
 Larry Sadwick
Phone: (801) 975-7399
Email: sadwick@innosystech.com
Research Institution
N/A
Abstract

The objective of this Phase II SBIR is to develop extreme environment hardened high-power switching vacuum transistors, based on InnoSys innovative micro-thermionic-vacuum (MTV) device technology. This patented, cutting edge technology is crucial for power supply designs including but not limited to switching and linear converters and regulators that support the operation of electronic systems necessary to survive and operate through exposure to extreme temperature, radiation, and electromagnetic pulse (EMP) environments encountered in high altitudes, space, nuclear facilities, etc. as well as man-made events including those due to or related to bad actor scenarios. To accomplish this, in Phase II we will develop extreme environment insensitive high-power switching vacuum transistors based on MTV device technology that has current successful commercial applications in down hole, geothermal, space, nuclear facilities and reactors, etc. Air Force specific design and manufacturing processes will first be developed. Environmental testing to include single event effects (SEE), EMP, shock and vibration will then be conducted on the manufactured extreme environment insensitive high-power switching vacuum transistors. Reliability; mean time to failure; part lifetime; aging; failure mechanisms; lot-to-lot variation; quality control; surveillance testing of fielded components for the extreme environment high-power switching vacuum transistors will all be studied carefully.

* Information listed above is at the time of submission. *

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