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Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-06-C-0133
Agency Tracking Number: A064-019-0032
Amount: $100,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A06-T019
Solicitation Number: N/A
Solicitation Year: 2006
Award Year: 2006
Award Start Date (Proposal Award Date): 2006-08-08
Award End Date (Contract End Date): 2007-02-03
Small Business Information
4117A Via Andorra
Santa Barbara, CA 93110
United States
DUNS: 199434338
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Paul Fini
 (805) 451-3556
Business Contact
 Benjamin Haskell
Title: Chief Executive Officer
Phone: (805) 453-3257
Research Institution
 Kevin Stewart
Office of Research
Santa Barbara, CA 93106
United States

 (805) 893-4034
 Nonprofit College or University

Inlustra Technologies and the University of California, Santa Barbara propose to grow and characterize thick non-polar and semi-polar gallium nitride (GaN) wafers that will act as seeds for subsequent GaN boule growth. In this Phase I STTR effort, Inlustra will first develop non-polar and semi-polar GaN films with smooth surfaces and minimal wafer bowing and cracking. The growth conditions for each type of crystallographic plane will be primarily optimized with respect to surface morphology. Defect reduction methods will then be applied to achieve uniformly low extended defect density across the wafer. UCSB researchers will conduct extensive microstructural, optical, and electrical characterization on these non-polar and semi-polar thick films to evaluate their utility as seeds for equiaxed GaN boule growth.

* Information listed above is at the time of submission. *

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