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Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-08-C-0123
Agency Tracking Number: A064-019-0032
Amount: $750,000.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: A06-T019
Solicitation Number: N/A
Timeline
Solicitation Year: 2006
Award Year: 2008
Award Start Date (Proposal Award Date): 2008-08-29
Award End Date (Contract End Date): 2009-11-26
Small Business Information
5385 Hollister Ave. #113
Santa Barbara, CA 93111
United States
DUNS: 199434338
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Paul Fini
 Chief Technology Officer
 (805) 504-4639
 fini@inlustra.com
Business Contact
 Benjamin Haskell
Title: Chief Executive Officer
Phone: (805) 504-4639
Email: bhaskell@inlustra.com
Research Institution
 U.C. SANTA BARBARA
 Kevin Stewart
 
Office of Research 3227 Cheadle Hall
Santa Barbara, CA 93106 2050
United States

 (805) 893-4034
 Nonprofit College or University
Abstract

Inlustra Technologies and the University of California, Santa Barbara propose a Phase II STTR project to grow and characterize single-crystal boules of gallium nitride (GaN) along non-polar directions. These boules will have sufficient size to yield multiple two-inch (50.8 mm) diameter non-polar GaN substrates with n-type conductivity. During Phase II, GaN boules will be grown from high-quality non-polar GaN seed wafers initially developed during and subsequent to the Phase I effort. These 50.8 mm seed wafers will have smooth surfaces, low average microscopic defect density, and low residual strain – factors critical to successful GaN boule growth. Inlustra personnel will initially focus on seed wafer refinement, and then transition into development of optimal bulk GaN growth conditions for each non-polar seed wafer orientation. By the end of the program, boules of 50.8 mm diameter and at least 15 mm thickness will be sliced into free-standing, n-type conductive non-polar GaN substrates. UCSB personnel will conduct extensive micro¬structural, optical, and electrical characterization on seed wafers, boules, and the non-polar GaN substrates derived from them. Regular feedback on crystal surface and microstructural quality in particular will provide Inlustra with the means of improving key GaN crystal growth parameters.

* Information listed above is at the time of submission. *

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