You are here

SBIR Phase I: Scalable Bulk GaN Crystal Growth

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 0946011
Agency Tracking Number: 0946011
Amount: $150,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: NM
Solicitation Number: NSF 09-541
Timeline
Solicitation Year: N/A
Award Year: 2009
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
5385 Hollister Ave. #113
Santa Barbara, CA 93111
United States
DUNS: 199434338
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Paul Fini
 PhD
 (805) 504-4639
 fini@inlustra.com
Business Contact
 Paul Fini
Title: PhD
Phone: (805) 504-4639
Email: fini@inlustra.com
Research Institution
N/A
Abstract

This Small Business Innovation Research Phase I project will demonstrate the feasibility of economical and scalable GaN bulk crystal growth techniques to produce non-polar and semi-polar GaN substrates with a uniformly low dislocation density. The non-polar and semi-polar GaN substrates will be derived from a novel multi-step crystal growth process that yields true bulk GaN single crystals. These substrates will find application in advanced GaN-based devices such as laser diodes and ultra-high brightness light emitting diodes (LEDs).The resulting substrate price reduction will accelerate adoption of GaN substrates by LED manufacturers, and expand LED use in demanding and price sensitive solid-state lighting applications. GaN-based LEDs present exciting long-term prospects for solid-state lighting, via the replacement of inefficient and/or toxic conventional light sources such as light bulbs and fluorescent lamps.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government