THz and Sub-THz MEMS-Fabricated Klystron Amplifier

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$100,000.00
Award Year:
2009
Program:
STTR
Phase:
Phase I
Contract:
W911NF-09-C-0142
Agency Tracking Number:
A09A-016-0236
Solicitation Year:
n/a
Solicitation Topic Code:
Army 09-016
Solicitation Number:
n/a
Small Business Information
InnoSys
2900 South Main Street, Salt Lake City, UT, 84115
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
013017947
Principal Investigator:
Larry Sadwick
CTO
(801) 975-7399
sadwick@innosystech.com
Business Contact:
Jennifer Hwu
CEO/President
(801) 975-7399
hwu@innosystech.com
Research Institution:
Purdue University
Deborah Horton
155 S. Grant Street
West Lafayette, IN, 47907
(765) 496-2393
Nonprofit college or university
Abstract

InnoSys and Purdue University propose to research and develop robust designs for building, implementing and demonstrating a new class of terahertz (THz) vacuum electronic device (VED) power amplifiers and power sources at frequencies in the range of 0.3-3.0 THz (the so-called THz regime) employing advanced micro electro mechanical system (MEMS) technology and processes. There is significant interest in exploiting the THz regime, however, to date there is a lack of THz power sources to so with. The design, implementation and demonstration of this new class of microfabricated VEDs is the core of our response to this STTR solicitation. More specifically, electron gun, radio frequency (RF) slow wave structure, collector, and thermal management of the THz VED will be integrated and fabricated with a combination of MEMS-fabrication processes, including photolithography, deep reactive ion etching, and wafer bonding with sub-micron alignment tolerances. For this STTR program, InnoSys in cooperation with its research institute partner, Purdue University, will address the lack of powerful, compact and tunable sources of terahertz radiation by combining comprehensive simulations with state-of the art MEMS fabrication and 3-dimensional integration to realize a new class of high power THz VED power amplifiers and sources.

* information listed above is at the time of submission.

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