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Low Temperature Atomic Layer Deposition of Manganese Telluride on Topological Insulator

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-20-P-0006
Agency Tracking Number: A19B-007-0021
Amount: $171,463.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A19B-T007
Solicitation Number: 19.B
Timeline
Solicitation Year: 2019
Award Year: 2020
Award Start Date (Proposal Award Date): 2019-12-19
Award End Date (Contract End Date): 2020-06-19
Small Business Information
44 Hunt Street
Watertown, MA 02472
United States
DUNS: 073804411
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Harish Bhandari
 Principal Investigator
 (617) 668-6922
 hbhandari@rmdinc.com
Business Contact
 Kanai Shah
Phone: (617) 668-6801
Email: kshah@rmdinc.com
Research Institution
 Boston College
 Sharon Comvalius-Goddard Sharon Comvalius-Goddard
 
140 Commonwealth Avenue
Chestnut Hill, MA 02467
United States

 (617) 552-3344
 Nonprofit college or university
Abstract

Planar heterojunction comprised of topological insulator and magnetic insulator layers provide a unique opportunity to develop highly energy efficient electronics. The key challenge for the heterojunction is to fabricate a clean and abrupt interface between the two layers for efficient magnetic coupling. The growth of the magnetic materials should ideally be a low-temperature process in order to preserve the pristine surface conditions of the topological insulator. We propose to explore layer-by-layer deposition of magnetic material at temperature below 300 C on topological insulators. The fabricated heterojunctions shall be evaluated to confirm the magnetic order of the magnetic material by variable-temperature hall measurements.

* Information listed above is at the time of submission. *

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